IXFK20N80Q

HiPerFETTM Power MOSFETs VDSS = 800 V ID25 = 20 A RDS(on) = 0.42 Ω IXFH20N80Q IXFK20N80Q IXFT20N80Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 20 80 20 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight (TAB) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) TJ TJM Tstg TL TO-247 AD (IXFH) 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TO-247 TO-264 TO-247 TO-268 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 4 10 G D G = Gate S = Source D (TAB) S TAB = Drain g g g Features z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2002 IXYS All rights reserved 800 2.5 TJ = 25°C TJ = 125°C V 4.5 V ±200 nA 25 1 µA mA 0.42 Ω z z z z z IXYS advanced low Qg process International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z z Easy to mount Space savings High power density DS98616A(12/02) IXFH20N80Q IXFK20N80Q IXFT20N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 11 19 S 5100 pF 500 pF Crss 170 pF td(on) 28 ns TO-247 AD (IXFH) Outline 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 ns td(off) RG = 1.5 Ω (External), 74 ns 14 ns tf Qg(on) 150 200 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd RthCK TO-247 TO-264 Source-Drain Diode Dim. nC nC 80 nC 0.35 0.25 0.15 K/W K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive; pulse width limited by TJM 80 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM 1 9 IF = IS -di/dt = 100 A/µs, VR = 100 V 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 34 RthJC 2 TO-268 Outline Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.