IXFK24N80P

PolarHVTM HiPerFET Power MOSFET IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A Ω RDS(on) ≤ 400 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 24 A IDM TC = 25°C, pulse width limited by TJM 55 A IAR TC = 25°C 12 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 10 V/ns PD Maximum Ratings G D S D (TAB) TO-268 (IXFT) Case Style G TC = 25°C TJ TJM Tstg Md Mounting torque (TO-247 & TO-264) Weight TO-247 TO-268 TO-264 TL TSOLD TO-247 (IXFH) 650 W -55 ... +150 150 -55 ... +150 °C °C °C S D (TAB) TO-264 AA (IXFK) 1.13/10 Nm/lb.in. 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s 6 5 10 g g g 300 260 °C °C G D (TAB) S G = Gate S = Source D = Drain Tab = Drain Features Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. z V z 5.0 V z ±100 nA 25 1000 μA μA 400 mΩ BVDSS VGS = 0 V, ID = 250 μA 800 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % z Advantages z z z © 2006 IXYS All rights reserved International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings High power density DS99572E(07/06) IXFH 24N80P IXFK 24N80P IXFT 24N80P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 15 Ciss Coss 25 S 7200 pF 470 pF 26 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 32 ns tr VGS = 10 V, VDS = 0.5 ID25 27 ns td(off) RG =2 Ω (External) 75 ns 24 ns 105 nC 30 nC 33 nC tf Qg(on) VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd 0.19 °C/W RthJC RthCS RthCS TO-247 TO-264 °C/W °C/W 0.21 0.15 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 24 A ISM Repetitive 55 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/μs 250 ns QRM IRM VR = 100V 0.8 6.0 TO-247 AD (IXFH) Outline 1 Dim. 2 3 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-264 (IXFK) Outline μC A TO-268 (IXFT)Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2 IXFH 24N80P IXFK 24N80P IXFT 24N80P Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 55 24 22 20 45 18 40 6V 6V 16 ID - Amperes ID - Amperes VGS = 10V 7V 50 VGS = 10V 14 12 10 5V 8 35 30 25 20 15 6 4 10 2 5 0 5V 0 0 1 2 3 4 5 6 7 8 0 9 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.1 24 VGS = 10V 6V 22 VGS = 10V 2.8 20 2.5 16 RDS(on) - Normalized ID - Amperes 18 5V 14 12 10 8 6 2.2 1.9 I D = 24A I D = 12A 1.6 1.3 1 4 0.7 2 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 20 -25 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3 26 2.8 24 VGS = 10V TJ = 125ºC 2.6 22 20 2.4 18 ID - Amperes RDS(on) - Normalized 0 2.2 2 1.8 1.6 16 14 12 10 8 1.4 6 TJ = 25ºC 1.2 4 1 2 0.8 0 0 5 10 15 20 25 30 I D - Amperes © 2006 IXYS All rights reserved 35 40 45 50 55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH 24N80P IXFK 24N80P IXFT 24N80P Fig. 8. Transconductance Fig. 7. Input Admittance 65 40 60 36 55 32 50 g f s - Siemens ID - Amperes 28 24 20 TJ = 125ºC 25ºC - 40ºC 16 45 40 TJ = - 40ºC 25ºC 125ºC 35 30 25 20 12 15 8 10 4 5 0 0 3 3.5 4 4.5 5 5.5 0 6 5 10 15 VGS - Volts 20 25 30 35 40 45 50 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 36 10 32 9 28 8 VDS = 400V I G = 10mA 7 24 VGS - Volts IS - Amperes I D = 12A 20 TJ = 125ºC 16 12 6 5 4 3 TJ = 25ºC 8 2 4 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 10 20 VSD - Volts 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 10,000 1.00 1,000 R(th)JC - ºC / W Capacitance - PicoFarads Ciss C oss 100 f = 1 MHz C rss 10 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. F_24N80P (8J) 6-22-06.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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