IXFK300N20X3

IXFK300N20X3 IXFX300N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = 200V = 300A  4m  D N-Channel Enhancement Mode Avalanche Rated G TO-264 (IXFK) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) TC = 25C (Chip Capability) External Lead Current Limit 300 160 A A IDM TC = 25C, Pulse Width Limited by TJM 700 A IA TC = 25C 150 A EAS TC = 25C 3.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 1250 W G -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) D Tab S PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2019 IXYS CORPORATION, All Rights Reserved   High Power Density Easy to Mount Space Savings V 4.5 V Applications 200 nA  25 A 1.5 mA  4 m    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100844C(11/19) IXFK300N20X3 IXFX300N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 80 RGi Gate Input Resistance Ciss Coss 135 S 1.8  23.8 nF 4.0 nF 3.2 pF 1640 5640 pF pF 44 ns 43 ns 184 ns 13 ns 375 nC 117 nC 94 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.10 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr QRM IRM IF = 150A, -di/dt = 100A/μs 172 1.1 12.8 VR = 100V 300 A 1200 A 1.4 V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFK300N20X3 IXFX300N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 900 300 VGS = 10V VGS = 10V 9V 250 8V 200 700 150 100 8V 600 7V I D - Amperes I D - Amperes 9V 800 500 7V 400 300 6V 200 6V 50 100 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 2 4 6 8 VDS - Volts 12 14 16 18 20 22 Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 300 2.4 VGS = 10V VGS = 10V 2.2 9V 250 2.0 RDS(on) - Normalized 8V 200 I D - Amperes 10 VDS - Volts 150 7V 100 I D = 300A 1.6 I D = 150A 1.4 1.2 1.0 0.8 6V 50 1.8 0.6 5V 0.4 0 0 3.5 0.4 0.8 1.2 1.6 2 -50 2.4 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 2.5 BVDSS / VGS(th) - Normalized 3.0 RDS(on) - Normalized -25 VDS - Volts o TJ = 125 C 2.0 1.5 o TJ = 25 C 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 100 200 300 400 500 600 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 700 800 900 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFK300N20X3 IXFX300N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 400 180 160 350 External Lead Current Limit 140 300 I D - Amperes I D - Amperes 120 100 80 60 250 200 150 o TJ = 125 C o 25 C 100 40 o - 40 C 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 400 800 o 700 300 600 o 25 C 250 200 I S - Amperes g f s - Siemens TJ = - 40 C 350 o 125 C 150 500 400 300 100 200 50 100 0 o TJ = 125 C o TJ = 25 C 0 0 50 100 150 200 250 300 350 400 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V Ciss Capacitance - PicoFarads I D = 150A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 50 100 150 200 250 300 350 400 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFK300N20X3 IXFX300N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 30 RDS(on) Limit 25μs 25 100μs External Lead Current Limit 20 I D - Amperes E OSS - MicroJoules 100 15 10 10 1ms 10ms 1 5 o TJ = 150 C DC o Fig. 15. Maximum Transient 10 0 50 100 150 TC = 25 C ThermalSingle Impedance Pulse 100ms 0.1 200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_300N20X3 (29-S202) 6-22-17 IXFK300N20X3 IXFX300N20X3 PLUS247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-264 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK300N20X3 IXFX300N20X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved