IXFK32N100P

PolarTM Power MOSFET HiPerFETTM IXFK32N100P IXFX32N100P VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1000 1000 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 32 75 A A IAR EAS TC = 25°C TC = 25°C 16 1.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 960 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TO-264 (IXFK) TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120/4.5..27 Nm/lb. Weight TO-264 TO-247 10 6 g g Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages Easy to mount z Space savings z High power density z V 6.5 V ± 200 nA Applications: 50 μA 2.5 mA z 320 mΩ z z z z © 2008 IXYS CORPORATION,All rights reserved = 1000V = 32A Ω ≤ 320mΩ ≤ 300ns Switched-mode and resonant mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99777C(4/08) IXFK32N100P IXFX32N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 • ID25, Note 1 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-264 (IXFK) Outline 21 S 14.2 nF 815 pF 60 pF 1.50 Ω 50 ns RGi Gate input resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 ns td(off) RG = 1Ω (External) 76 ns 43 ns 225 nC 85 nC 94 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC °C/W 0.13 RthCS °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C unless otherwise specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 32 A Repetitive, pulse width limited by TJM 128 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 16A, -di/dt = 100A/μs VR = 100V, VGS = 0V 300 ns μC A 2.2 15 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK32N100P IXFX32N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 70 32 VGS = 15V 10V 28 24 50 ID - Amperes 9V ID - Amperes VGS = 15V 10V 60 20 16 8V 12 9V 40 30 8V 20 8 7V 4 10 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 25 30 3.0 32 2.8 VGS = 15V 10V 9V RDS(on) - Normalized 8V 20 16 12 VGS = 10V 2.6 24 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 28 15 VDS - Volts VDS - Volts 7V 2.4 2.2 I D = 32A 2.0 1.8 I D = 16A 1.6 1.4 1.2 1.0 8 0.8 4 0.6 6V 0.4 0 -50 0 2 4 6 8 10 12 14 16 18 20 -25 0 22 25 50 75 100 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 35 2.6 2.4 30 TJ = 125ºC 25 2 ID - Amperes RDS(on) - Normalized 2.2 VGS = 10V 1.8 15V - - - 1.6 20 15 1.4 10 1.2 5 1 TJ = 25ºC 0.8 0 0 5 10 15 20 25 30 35 40 ID - Amperes © 2008 IXYS CORPORATION,All rights reserved 45 50 55 60 65 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK32N100P IXFX32N100P Fig. 8. Transconductance 40 40 35 35 30 30 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 25 TJ = 125ºC 25ºC - 40ºC 20 15 25 15 10 10 5 5 0 TJ = - 40ºC 25ºC 125ºC 20 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 VGS - Volts 20 25 30 35 40 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 16 90 14 80 VDS = 500V I D = 16A I G = 10mA 12 VGS - Volts IS - Amperes 70 60 50 40 TJ = 125ºC 30 TJ = 25ºC 10 8 6 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 VSD - Volts 100 150 200 250 300 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 1,000 Crss 100 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_32N100P(96)3-28-08-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.