IXFK32N90P

Advance Technical Information IXFK32N90P IXFX32N90P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 900V = 32A Ω < 300mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 32 A IDM TC = 25°C, Pulse Width Limited by TJM 80 A IA TC = 25°C 16 A EAS TC = 25°C 2 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 960 W -55 to +150 °C TJ TJM 150 °C Tstg -55 to +150 °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D S Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 900 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 z z V 6.5 V ±200 nA 25 μA 2 mA 300 mΩ Applications z z z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100387(9/11) IXFK32N90P IXFX32N90P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd TO-264 Outline 22 S 10.6 nF 750 pF 140 pF 1.1 Ω 48 ns 80 ns 68 ns 26 ns 215 nC 80 nC 98 nC 0.13 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 16A, -di/dt = 100A/μs Note: 1.9 14 VR = 100V, VGS = 0V Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. Inches Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM Outline 300 ns μC A Terminals: 1 - Gate 2 - Drain 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK32N90P IXFX32N90P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 32 VGS = 10V 9V 28 VGS = 10V 9V 70 60 24 8V ID - Amperes ID - Amperes 50 20 16 12 40 8V 30 7V 8 20 4 10 7V 6V 6V 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 32 3.0 VGS = 10V 8V 28 20 VDS - Volts VDS - Volts VGS = 10V 2.6 R DS(on) - Normalized ID - Amperes 24 20 7V 16 12 2.2 I D = 32A 1.8 I D = 16A 1.4 1.0 8 6V 0.6 4 5V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 3.0 VGS = 10V 30 TJ = 125ºC 25 2.2 ID - Amperes R DS(on) - Normalized 2.6 1.8 TJ = 25ºC 1.4 20 15 10 1.0 5 0.6 0 0 10 20 30 40 50 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK32N90P IXFX32N90P Fig. 7. Input Admittance 50 45 45 40 40 35 30 TJ = - 40ºC 25ºC 35 TJ = 125ºC 25ºC - 40ºC g f s - Siemens ID - Amperes Fig. 8. Transconductance 50 25 20 30 125ºC 25 20 15 15 10 10 5 5 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 55 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 16 90 VDS = 450V 14 I D = 16A 80 I G = 10mA 12 60 VGS - Volts IS - Amperes 70 50 40 TJ = 125ºC 10 8 6 30 4 TJ = 25ºC 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 50 VSD - Volts 100 150 200 250 300 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 100,000 f = 1 MHz 25µs Ciss 100µs 10,000 ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 10 Coss TJ = 150ºC 1ms TC = 25ºC Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK32N90P IXFX32N90P Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13 Maximum Transient Thermal Impedance sdasd 0.3 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_32N90P(86) 9-27-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.