IXFK360N15T2

IXFK360N15T2 IXFX360N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M 150 150 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM 360 160 900 A A A IA EAS TC = 25C TC = 25C 100 TBD A J PD TC = 25C 1670 W dV/dt IS  IDM, VDD  VDSS, TJ  175°C 20 V/ns -55 ... +175 175 -55 ... +175 C C C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g G D S Maximum Ratings TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) Tab PLUS247 (IXFX) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2.5 IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 5.0 200      TJ = 150C International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Easy to Mount Space Savings High Power Density V Applications V    50 A 5 mA  4.0 m     © 2016 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Advantages  nA Tab S Features  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D G = Gate S = Source  VGS =  20V, VDS = 0V 150V 360A  4.0m 150ns RDS(on)   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IGSS = = Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100181A(8/16) IXFK360N15T2 IXFX360N15T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 140 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) td(off) tf S 47.5 nF pF 665 pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1 (External) Qg(on) Qgs 230 3060 Crss tr TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 50 ns 170 ns 115 ns 265 ns 715 nC 185 nC 200 nC RthJC 0.09C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 60A, VGS = 0V, Note 1 trr QRM IRM IF = 160A, -di/dt = 100A/s VR = 60V, VGS = 0V 0.50 9.00 360 A 1440 A 1.2 V 150 ns  C Pins: 1 - Gate 2,4 - Drain 3 - Source Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Terminals: 1 - Gate 2 - Drain 3 - Source A A1 A2 b b1 b2 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. A Note 1. Pulse test, t  300s; duty cycle, d 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK360N15T2 IXFX360N15T2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 350 350 VGS = 15V 10V 8V 7V 300 250 250 200 I D - Amperes I D - Amperes VGS = 10V 7V 6V 300 6V 150 100 200 150 5V 100 50 50 5V 4V 0 0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 VDS - Volts 350 3.0 VGS = 10V 8V 7V 7 8 9 10 VGS = 10V 2.6 R DS(on) - Normalized 250 I D - Amperes 6 Fig. 4. RDS(on) Normalized to ID = 180A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 300 5 VDS - Volts 6V 200 5V 150 100 4V 50 2.2 I D = 360A 1.8 I D = 180A 1.4 1.0 0.6 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 180A Value vs. Drain Current 3.4 25 Fig. 6. Drain Current vs. Case Temperature 180 VGS = 10V 3.0 160 External Lead Current Limit 2.6 TJ = 175ºC 120 I D - Amperes RDS(on) - Normalized 140 2.2 1.8 100 80 60 1.4 40 TJ = 25ºC 1.0 20 0.6 0 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK360N15T2 IXFX360N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 450 180 400 TJ = - 40ºC 160 120 25ºC g f s - Siemens I D - Amperes 350 TJ = 150ºC 25ºC - 40ºC 140 100 80 60 300 250 150ºC 200 150 40 100 20 50 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 VGS - Volts 120 140 160 180 200 220 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 350 VDS = 75V 9 300 I D = 180A 8 250 I G = 10mA 7 VGS - Volts I S - Amperes 100 I D - Amperes 200 150 6 5 4 TJ = 150ºC 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 100 200 300 400 500 600 700 800 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit 25µs 100µs External Lead Limit 100 10,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 1ms 10 1,000 10ms 1 TJ = 175ºC Crss 100ms DC TC = 25ºC f = 1 MHz Single Pulse 0.1 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFK360N15T2 IXFX360N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 340 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 300 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V 260 VDS = 75V 260 t r - Nanoseconds t r - Nanoseconds 300 I D = 100A 220 180 I D = 200A 140 VDS = 75V 220 TJ = 25ºC 180 TJ = 125ºC 140 100 60 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 210 TJ = 125ºC, VGS = 10V 180 600 150 500 120 300 90 60 I D = 100A 100 30 0 2 3 4 5 6 7 8 9 180 400 160 I D = 200A I D = 100A 300 120 100 100 25 10 35 45 55 700 tf td(off) RG = 1Ω, VGS = 10V 80 125 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 180 t f - Nanoseconds 600 I D = 200A, 100A 300 300 120 200 200 100 200 100 TJ = 25ºC 160 600 700 400 140 140 VDS = 75V 700 400 200 0 800 500 160 100 td(off) 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds t f - Nanoseconds 115 500 300 120 105 TJ = 125ºC, VGS = 10V t d(off) - Nanoseconds 180 TJ = 125ºC 100 95 900 tf 800 220 200 80 85 900 VDS = 75V 500 60 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 240 40 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 400 140 200 RG - Ohms 600 200 RG = 1Ω, VGS = 10V 0 0 1 td(off) t d(off) - Nanoseconds 400 200 200 VDS = 75V I D = 200A t d(on) - Nanoseconds t r - Nanoseconds VDS = 75V 180 220 tf 500 160 700 td(on) t f - Nanoseconds 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 I D - Amperes IXFK360N15T2 IXFX360N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.200 Z (th)JC - K / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_360N15T2(9V)8-19-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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