IXFK420N10T

Advance Technical Information IXFK420N10T IXFX420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.6mΩ 140ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ 100 100 V V VGSS VGSM Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 420 160 1000 A A A IA EAS TC = 25°C TC = 25°C 100 5 A J PD TC = 25°C 1670 W dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 20..120 /4.5..27 N/lb. 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G G BVDSS VGS = 0V, ID = 3mA 100 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 60A, Note 1 5.0 ± 200 TJ = 150°C z z z z z D = Drain TAB = Drain International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Easy to Mount Space Savings High Power Density V Applications V z z nA TAB S Features z 50 μA 5 mA z 2.6 mΩ z z z z © 2009 IXYS CORPORATION, All Rights Reserved D G = Gate S = Source z Characteristic Values Min. Typ. Max. TAB S PLUS247 (IXFX) z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Synchronous Recification DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100198(09/09) IXFK420N10T IXFX420N10T Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 110 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf S 47 nF pF 530 pF 1.46 Ω 47 ns 155 ns 115 ns 255 ns 670 nC 170 nC 195 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs 185 4390 Crss RGi TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.09 RthJC RthCS °C/W °C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 60A, VGS = 0V, Note 1 trr QRM IRM 420 A 1680 A 1.2 V 140 IF = 150A, -di/dt = 100A/μs VR = 60V, VGS = 0V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T μC 7.00 A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Dim. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. ns 0.38 Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK420N10T IXFX420N10T Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 @ T J = 25ºC 400 VGS = 15V 10V 8V 7V 300 6V 300 ID - Amperes 250 ID - Amperes VGS = 15V 10V 7V 350 6V 200 150 5.5V 250 200 150 5V 100 5V 100 50 50 4V 4V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.0 0.8 0.5 1.0 1.5 VDS - Volts 2.0 2.5 3.0 3.5 VDS - Volts Fig. 3. Output Characteristics Fig. 4. Normalized RDS(on) vs. Junction Temperature @ T J = 150ºC 2.6 320 VGS = 15V 10V 8V 7V ID - Amperes 240 6V 200 R DS(on) - Normalized 280 5V 160 120 4.5V 80 2.4 VGS = 10V 2.2 I D < 420A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 40 4V 0.6 0.4 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 1.6 -25 0 25 VDS - Volts Fig. 5. Normalized RDS(on) vs. Drain Current 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 180 2.8 VGS = 10V 2.6 160 External Lead Current Limit 2.4 140 TJ = 175ºC 2.2 120 ID - Amperes R DS(on) - Normalized 50 TJ - Degrees Centigrade 2.0 1.8 1.6 100 80 60 1.4 40 1.2 TJ = 25ºC 20 1.0 0.8 0 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK420N10T IXFX420N10T Fig. 7. Input Admittance Fig. 8. Transconductance 180 350 TJ = - 40ºC 160 300 140 250 100 g f s - Siemens ID - Amperes 120 TJ = 150ºC 80 25ºC 60 200 150ºC 150 100 - 40ºC 40 25ºC 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 Fig. 10. Gate Charge 10 350 VDS = 50V 9 300 I D = 210A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 80 ID - Amperes 200 150 TJ = 150ºC 6 5 4 3 100 TJ = 25ºC 2 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 300 VSD - Volts 400 500 600 700 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100.0 Ciss TC = 25ºC Single Pulse 1,000 25µs 10.0 ID - Amperes Capacitance - NanoFarads TJ = 175ºC RDS(on) Limit Coss 100µs External Lead Limit 100 1.0 1ms 10 Crss f = 1 MHz 10ms DC 100ms 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_420N10T(9V)9-22-09 IXFK420N10T IXFX420N10T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 320 340 RG = 1Ω , VGS = 10V RG = 1Ω , VGS = 10V 280 VDS = 50V 300 VDS = 50V t r - Nanoseconds t r - Nanoseconds 240 260 I = 200A D 220 180 200 160 TJ = 125ºC 120 TJ = 25ºC 80 I 140 = 100A D 40 0 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 td(on) - - - - TJ = 125ºC, VGS = 10V 200 RG = 1Ω, VGS = 10V 80 I D = 100A t f - Nanoseconds 300 500 40 100 4 5 6 7 8 9 180 400 160 I D = 200A 300 140 I D = 100A 200 120 100 100 0 0 3 25 10 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 500 tf td(off) - - - - 400 tf 140 100 700 VDS = 50V 600 600 I D = 200A 500 500 I D = 100A 400 400 300 300 200 200 100 0 40 60 80 100 120 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 60 200 100 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds TJ = 25ºC t d(off) - Nanoseconds 180 TJ = 125ºC td(off) - - - - TJ = 125ºC, VGS = 10V 220 VDS = 50V 200 800 700 RG = 1Ω, VGS = 10V 80 125 800 260 t f - Nanoseconds t r - Nanoseconds 120 200 t f - Nanoseconds td(off) - - - - t d(off) - Nanoseconds 400 t d(on) - Nanoseconds 160 I D = 200A 300 200 VDS = 50V VDS = 50V 2 180 220 tf 600 200 500 1 160 700 240 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFK420N10T IXFX420N10T Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.200 Z (th )JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_420N10T(9V)9-22-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.