IXFK44N80P

IXFK44N80P IXFX44N80P PolarTM HiperFETTM Power MOSFET VDSS ID25 TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 800 800 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 44 100 A A IA EAS TC = 25C TC = 25C 22 3.4 A J dv/dt IS  IDM, VDD  VDSS, TJ 150C 10 V/ns PD TC = 25C 1040 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 800V 44A  190m RDS(on)  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TL TSOLD = = 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(on) Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BV DSS VGS = 0V, ID = 800μA 800 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 22A, Note 1 TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved   Easy to Mount Space Savings High Power Density V 5.0 V 200 nA 50 A 1.5 mA 190 m DS99478F(12/18) IXFK44N80P IXFX44N80P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 VDS = 20V, ID = 22A, Note 1 43 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz C rss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 1 (External) Qg(on) Qgs TO-264 Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd S 12 nF 910 pF 30 pF 28 ns 22 ns 75 ns 27 ns 198 nC 67 nC 65 nC RthJC PINS: 1 - Gate 2,4 - Drain 3 - Source 0.12C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 44A, VGS = 0V, Note 1 t rr IRM IF = 22A, VGS = 0V QRM Note -di/dt = 100A/s VR = 100V 44 A 100 A 1.5 V 8.0 250 ns A 0.8 μC PLUS247TM Outline PINS: 1 - Gate 2,4 - Drain 3 - Source 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK44N80P IXFX44N80P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 45 VGS = 10V 40 35 80 6V 7V 70 I D - Amperes 30 I D - Amperes VGS = 10V 90 25 20 15 60 6V 50 40 30 10 20 5V 5 5V 10 0 0 0 1 2 3 4 5 6 7 0 8 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.6 45 VGS = 10V 40 VGS = 10V 2.2 RDS(on) - Normalized 6V 35 30 I D - Amperes 20 VDS - Volts VDS - Volts 25 20 5V 15 I D = 44A 1.8 I D = 22A 1.4 1.0 10 0.6 5 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current 2.4 VGS = 10V 2.2 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 50 45 o TJ = 125 C 40 35 1.8 I D - Amperes RDS(on) - Normalized 2.0 1.6 o TJ = 25 C 1.4 30 25 20 15 1.2 10 1.0 5 0 0.8 0 10 20 30 40 50 60 70 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK44N80P IXFX44N80P Fig. 7. Input Admittance Fig. 8. Transconductance 80 90 70 80 o 70 60 o 50 40 o TJ = 125 C o 25 C 30 o 25 C 60 g f s - Siemens I D - Amperes TJ = - 40 C o 125 C 50 40 30 - 40 C 20 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 Fig. 10. Gate Charge 140 10 VDS = 400V 9 120 I D = 22A 8 100 I G = 10mA 7 V GS - Volts I S - Amperes 40 I D - Amperes 80 60 o TJ = 125 C 6 5 4 3 40 o TJ = 25 C 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 VSD - Volts 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz RDS(on) Limit 100 10,000 I D - Amperes Capacitance - PicoFarads Ciss Coss 1,000 100 25μs 100μs 10 1 1ms o TJ = 150 C Crss o TC = 25 C Single Pulse 10 DC 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 10ms 1,000 IXFK44N80P IXFX44N80P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF:F_44N80P (93-788)12-14-18-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.