IXFK48N60P

PolarHVTM HiPerFET Power MOSFET IXFK 48N60P IXFX 48N60P VDSS ID2 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 48 A IDM TC = 25° C, pulse width limited by TJM 110 A IAR TC = 25° C 48 A EAR TC = 25° C 70 mJ EAS TC = 25° C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 20 V/ns PD Maximum Ratings TJ TJM Tstg Mounting torque (TO-264) Weight TO-264 PLUS247 TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s TO-264 (IXFK) G D (TAB) S PLUS247 (IXFX) 830 W -55 ... +150 150 -55 ... +150 °C °C °C G = Gate S = Source D = Drain Tab = Drain 1.13/10 Nm/lb.in. 10 6 g g 300 260 °C °C Features l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±30 VDC, VDS = 0 l IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % TJ = 125° C International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V 5.0 V ±200 nA Advantages l l © 2006 IXYS All rights reserved 600 V 48 A Ω 135mΩ 200 ns (TAB) TC = 25° C Md = = ≤ ≤ 25 1000 µA µA 135 mΩ l Easy to mount Space savings High power density DS99375E(02/06) IXFK 48N60P IXFX 48N60P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 53 S 8860 pF 850 pF Crss 60 pF td(on) 30 ns Ciss Coss 35 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25 25 ns td(off) RG = 2 Ω (External) 85 ns 22 ns 150 nC 50 nC 50 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.15 ° C/W RthJC RthCs TO-264 (IXFK) Outline TO-264 and PLUS247 ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 48 A ISM Repetitive 110 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0.8 6.0 PLUS 247TM (IXFX) Outline µC A Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXFK 48N60P IXFX 48N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 50 VGS = 10V 45 40 VGS = 10V 120 8V 7V 8V 100 I D - Amperes I D - Amperes 35 30 25 6V 20 15 7V 80 60 40 6V 10 20 5 5V 5V 0 0 0 1 2 3 4 5 0 6 4 8 V D S - Volts Fig. 3. Output Characteristics @ 125ºC 20 24 3.1 VGS = 10V 45 R D S ( o n ) - Normalized 35 6V 30 25 20 15 10 VGS = 10V 2.8 7V 40 I D - Amperes 16 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 50 5V 2.5 2.2 I D = 48A 1.9 1.6 I D = 24A 1.3 1 0.7 5 0.4 0 0 2 4 6 8 V D S - Volts 10 12 -50 14 25 50 75 100 125 150 50 45 VGS = 10V 3.1 0 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.4 -25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to TJ = 125ºC 2.8 40 35 2.5 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts 2.2 1.9 1.6 1.3 30 25 20 15 10 TJ = 25ºC 1 5 0.7 0 0 20 40 60 80 I D - Amperes © 2006 IXYS All rights reserved 100 120 140 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK 48N60P IXFX 48N60P Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 80 90 70 80 50 g f s - Siemens I D - Amperes 60 TJ = 125ºC 25ºC -40ºC 40 30 20 70 60 50 TJ = -40ºC 40 25ºC 125ºC 30 20 10 10 0 0 4 4.5 5 5.5 6 6.5 7 0 10 20 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 70 80 90 140 160 Fig. 10. Gate Charge 10 160 140 120 100 VG S - Volts I S - Amperes 40 I D - Amperes 80 60 VDS = 300V 8 I D = 24A 7 I G = 10mA 6 5 4 3 TJ = 125ºC 40 9 2 TJ = 25ºC 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 V S D - Volts 1.1 1.2 0 1.3 20 40 60 80 100 120 Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 100000 1.00 C iss 10000 R( t h ) J C - ºC / W Capacitance - picoFarads f = 1MHz C oss 1000 100 0.10 C rss 0.01 10 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 Pulse Width - milliseconds 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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