IXFK52N100X

IXFK52N100X IXFX52N100X X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = RDS(on)  1000V 52A  125m D TO-264P (IXFK) G S G D Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 1000 1000 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 52 100 A A IA EAS TC = 25C TC = 25C 10 3 A J PD TC = 25C 1250 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264P) 1.13/10 Nm/lb.in FC Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Weight TO-264P PLUS247 10 6 g g PLUS247 (IXFX) G     VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C ©2019 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages  BVDSS Tab S Features  Characteristic Values Min. Typ. Max. D G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Tab S High Power Density Easy to Mount Space Savings Applications V 6.0 V 100 nA 50 A 5 mA Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  125 m DS100907D(11/19) IXFK52N100X IXFX52N100X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 23 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 37 S 0.5  6725 pF 1620 pF 123 pF 220 1070 pF pF 34 ns Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 13 ns 107 ns 9 ns 245 nC 53 nC 125 nC RthJC 0.10C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 52 A Repetitive, Pulse Width Limited by TJM 208 A IF = IS , VGS = 0V, Note 1 1.4 V 260 IF = 26A, -di/dt = 100A/s 2.7 VR = 100V, VGS = 0V 20.8 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK52N100X IXFX52N100X o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 140 VGS = 10V 50 8V 40 100 7V I D - Amperes I D - Amperes VGS = 10V 9V 120 30 20 8V 80 60 7V 40 6V 10 20 6V 5V 0 5V 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20 VDS - Volts 35 40 45 50 Fig. 4. RDS(on) Normalized to ID = 26A Value vs. Junction Temperature o 3.8 VGS = 10V 8V 3.4 VGS = 10V 3.0 RDS(on) - Normalized 7V 40 I D - Amperes 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 50 25 30 6V 20 2.6 2.2 I D = 52A 1.8 I D = 26A 1.4 1.0 10 5V 0.6 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 26A Value vs. Drain Current 4.5 100 125 150 1.2 o BVDSS / VGS(th) - Normalized TJ = 125 C 3.5 RDS(on) - Normalized 75 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 4.0 50 TJ - Degrees Centigrade 3.0 2.5 o TJ = 25 C 2.0 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.5 0.6 0 13 26 39 52 65 78 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 91 104 117 130 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFK52N100X IXFX52N100X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 60 45 40 VDS = 20V 50 35 - Amperes I I 30 25 o TJ = 125 C 20 o 25 C o - 40 C D 30 D - Amperes 40 20 15 10 10 5 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 200 60 o TJ = - 40 C VDS = 20V 50 160 o 30 - Amperes 25 C o S 125 C 120 80 o I g f s - Siemens 40 TJ = 125 C 20 o TJ = 25 C 40 10 0 0 0 5 10 15 20 25 30 35 40 0.2 45 0.4 0.6 0.8 1 Fig. 11. Gate Charge 1.4 1.6 Fig. 12. Capacitance 10 100,000 VDS = 500V Capacitance - PicoFarads I D = 26A 8 I G = 10mA VGS - Volts 1.2 VSD - Volts I D - Amperes 6 4 Ciss 10,000 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 50 100 150 200 250 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK52N100X IXFX52N100X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 120 RDS(on) Limit 25μs 100 10 80 I D - Amperes EOSS - MicroJoules 100μs 60 1ms 40 1 o TJ = 150 C o TC = 25 C Single Pulse 20 01 0 100 200 300 400 500 600 Fig. 15. 700 800 10ms DC 0.1 Maximum Transient Thermal Impedance 10 900 1000 VDS - Volts 100 100ms 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved IXYS_F_52N100X (U8-DA01) 10-02-18-A IXFK52N100X IXFX52N100X PLUS247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-264P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK52N100X IXFX52N100X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2019 IXYS CORPORATION, All Rights Reserved