IXFK64N60P

PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25° C 64 A IDM TC = 25° C, pulse width limited by TJM 150 A IAR TC = 25° C 64 A EAR TC = 25° C 80 mJ EAS TC = 25° C 3.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD TC = 25° C 1040 W -55 ... +150 150 -55 ... +150 °C °C °C 600 64 96 200 V A Ω mΩ ns Maximum Ratings TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s FC Mounting force (PLUS247) Md Mounting torque (TO-264) Weight TO-264 PLUS247 300 260 °C °C 20..120/4.5..25 N/lb 1.13/10 Nm/lb.in. 10 6 g g TO-264 (IXFK) G D Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 3 mA 600 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS V 5.0 V VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V 25 1000 µA µA (TAB) G = Gate S = Source RDS(on) VGS = 10 V, ID = 0.5 ID25, Note 1 96 mΩ D = Drain Tab = Drain Features l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l TJ = 125° C (TAB) S PLUS247 (IXFX) l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) © 2006 IXYS All rights reserved = = ≤ ≤ l l Easy to mount Space savings High power density DS99442E(01/06) IXFK 64N60P IXFX 64N60P Symbol Test Conditions gfs VDS = 20 V; ID = 0.5 ID25, Note 1 40 63 S 12 nF 1150 pF 80 pF Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25 23 ns td(off) RG = 1 Ω (External) 79 ns 24 ns 200 nC 70 nC 68 nC tf Qg(on) Qgs PLUS 247TM Outline Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 0.12 ° C/W RthJC ° C/W 0.15 RthCS Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 64 A ISM Repetitive 150 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/µs 200 ns QRM IRM VR = 100V 0.6 6.0 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 Outline µC A Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFK 64N60P IXFX 64N60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 65 160 V GS = 10V 8V 7V 60 55 V GS = 10V 8V 140 50 120 I D - Amperes I D - Amperes 45 40 35 30 6V 25 7V 100 80 60 20 6V 40 15 10 20 5V 5 5V 0 0 0 1 2 3 4 5 6 7 0 2 4 6 65 12 14 16 18 20 3.1 V GS = 10V 7V 60 55 V GS = 10V 2.8 2.5 R DS(on) - Normalized 50 45 I D - Amperes 10 Fig. 4. R DS(on) Normalized to ID = 32A v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 6V 40 35 30 25 20 5V 15 2.2 I D = 64A 1.9 1.6 I D = 32A 1.3 1 10 0.7 5 0 0.4 0 2 4 6 8 10 12 -50 14 -25 V DS - Volts 0 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 32A v s. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 70 3.2 3 V GS = 10V TJ = 125ºC 2.8 60 2.6 50 2.4 I D - Amperes R DS(on) - Normalized 8 V DS - Volts V DS - Volts 2.2 2 1.8 40 30 1.6 20 1.4 TJ = 25ºC 1.2 10 1 0.8 0 0 20 40 60 80 I D - Amperes © 2006 IXYS All rights reserved 100 120 140 160 -50 -25 0 25 50 75 T J - Degrees Centigrade 100 125 150 IXFK 64N60P IXFX 64N60P Fig. 8. Transconductance Fig. 7. Input Admittance 100 130 120 90 110 80 100 g f s - Siemens I D - Amperes 70 60 50 TJ = 125ºC 25ºC - 40ºC 40 90 80 TJ = - 40ºC 25ºC 125ºC 70 60 50 40 30 30 20 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 10 20 30 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 70 80 90 100 160 180 200 Fig. 10. Gate Charge V DS = 300V 9 120 I D = 32A 8 100 I G = 10mA V GS - Volts 7 80 60 TJ = 125ºC 6 5 4 3 40 TJ = 25ºC 2 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 1.2 20 40 V SD - Volts 60 80 100 120 140 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 1,000 f = 1 MHz TJ = 150ºC TC = 25ºC C iss Capacitance - PicoFarads 60 10 140 I S - Amperes 40 I D - Amperes RDS(on) Limit I D - Amperes 10,000 1,000 C oss 100 25µs 100µ 1ms 10 100 DC 10ms C rss 10 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.