IXFK64N60Q3

IXFK64N60Q3 IXFX64N60Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   G TO-264 (IXFK) S G D S Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM Maximum Ratings IA EAS Tab PLUS247 (IXFX) 64 A 250 A TC = 25C TC = 25C 64 3 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 1250 W G = Gate S = Source -55 ... +150 150 -55 ... +150 C C C Features 300 260 °C °C 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb 10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md FC Mounting Torque (TO-264) Mounting Force (PLUS247) Weight TO-264 PLUS247 G       Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 3.5 V    200 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved Tab S D = Drain Tab = Drain Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG High Power Density Easy to Mount Space Savings Applications V 6.5 D Advantages  BVDSS 600V 64A 95m 300ns 50 A 1.5 mA   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 95 m DS100350A(1/20) IXFK64N60Q3 IXFX64N60Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 26 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 42 9930 pF 1090 pF 90 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.13 Qgs   45 ns 15 ns 50 ns 11 ns 190 nC 67 nC 78 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) S VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.10C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 256 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 32A, -di/dt = 100A/s 2.1 16.6 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK64N60Q3 IXFX64N60Q3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C VGS = 10V 9V 60 V GS = 10V 9V 140 120 50 8V I D - Amperes I D - Amperes 100 40 30 80 8V 60 7V 20 40 7V 10 20 6V 6V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 3.4 VGS = 10V 8V 30 V GS = 10V 3.0 RDS(on) - Normalized 50 7V I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 60 20 VDS - Volts VDS - Volts 40 30 20 6V 2.6 I D = 64A 2.2 I D = 32A 1.8 1.4 1.0 10 0.6 5V 0 0.2 0 3.0 2 4 6 8 10 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 70 o V GS = 10V TJ = 125 C 60 2.6 50 2.2 I D - Amperes RDS(on) - Normalized -25 VDS - Volts 1.8 o TJ = 25 C 40 30 1.4 20 1.0 10 0 0.6 0 20 40 60 80 100 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFK64N60Q3 IXFX64N60Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 80 70 o TJ = - 40 C 70 60 o 60 25 C 50 40 g f s - Siemens I D - Amperes 50 o TJ = 125 C o 25 C o 30 - 40 C o 125 C 40 30 20 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 10 20 30 40 VGS - Volts 60 70 80 90 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 200 VDS = 300V 14 I D = 32A 160 I G = 10mA 12 120 V GS - Volts I S - Amperes 50 I D - Amperes 80 o 10 8 6 TJ = 125 C 4 o TJ = 25 C 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 150 200 250 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit f = 1 MHz 25µs Ciss 100 10,000 I D - Amperes Capacitance - PicoFarads 100 Coss 1,000 Crss 100 100µs 10 1 o TJ = 150 C 1ms o TC = 25 C Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK64N60Q3 IXFX64N60Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.2 Z (th )JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_64N60Q3(Q8) 6-21-11 IXFK64N60Q3 IXFX64N60Q3 TO-264 Outline D B E A Q S 0R Q1 D 0R1 1 2 L1 3 C L A1 b1 J M C AM b b2 c e = Gate 2,4 = Drain 3 = Source 1 0P1 BACK SIDE A K M D BM 0P 4 PLUS247TM Outline A E A2 E1 Q D2 R D 1 2 4 3 L1 L A1 C b b2 3 PLCS e 2 PLCS 2 PLCS b4 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK64N60Q3 IXFX64N60Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved