IXFK66N85X

IXFK66N85X IXFX66N85X X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = = RDS(on)  850V 66A  65m D TO-264P (IXFK) G S G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 850 850 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 66 140 A A IA EAS TC = 25C TC = 25C 33 2.5 A J PD TC = 25C 1250 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g PLUS247 (IXFX) G BVDSS VGS = 0V, ID = 1mA 850 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low QG Avalanche Rated Low Package Inductance Advantages   Characteristic Values Min. Typ. Max. S G = Gate S = Source  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) D High Power Density Easy to Mount Space Savings Applications V 5.5 V 100 nA 50 A 3 mA Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  65 m DS100714B(11/19) IXFK66N85X IXFX66N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 25 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 42 S 0.75  8900 pF 8900 pF 142 pF 294 1270 pF pF 40 ns Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 48 ns 105 ns 20 ns 230 nC 53 nC 113 nC RthJC 0.10C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 66 A Repetitive, Pulse Width Limited by TJM 264 A IF = IS , VGS = 0V, Note 1 1.4 V 250 IF = 33A, -di/dt = 100A/s 2.7 VR = 100V, VGS = 0V 21.7 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK66N85X IXFX66N85X Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 180 70 VGS = 10V VGS = 10V 160 9V 60 140 8V 40 7V 30 9V 120 I D - Amperes I D - Amperes 50 8V 100 80 60 20 7V 40 6V 10 20 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 5 10 15 VDS - Volts 3.4 70 VGS = 10V 30 VGS = 10V 3.0 60 8V 2.6 R DS(on) - Normalized 50 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 33A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 7V 40 30 6V 20 2.2 I D = 66A 1.8 I D = 33A 1.4 1.0 10 0.6 5V 0.2 0 0 3.5 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 33A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V BVDSS / VGS(th) - Normalized 2.5 2.0 TJ = 25ºC 1.5 150 1.2 TJ = 125ºC 3.0 RDS(on) - Normalized 20 VDS - Volts 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 100 120 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 140 160 180 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFK66N85X IXFX66N85X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 70 100 90 60 80 70 I D - Amperes I D - Amperes 50 40 30 TJ = 125ºC 25ºC - 40ºC 60 50 40 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade Fig. 9. Transconductance 6.5 7.0 7.5 8.0 8.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 200 90 TJ = - 40ºC 80 180 160 70 60 25ºC 50 125ºC 140 I S - Amperes g f s - Siemens 6.0 VGS - Volts 40 30 120 100 80 TJ = 125ºC 60 20 TJ = 25ºC 40 10 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0.3 110 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100,000 VDS = 425V I G = 10mA Capacitance - PicoFarads VGS - Volts Ciss I D = 33A 8 6 4 2 10,000 1,000 Coss 100 10 Crss f = 1 MHz 0 1 0 20 40 60 80 100 120 140 160 180 200 220 240 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK66N85X IXFX66N85X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 120 RDS(on) Limit 100 25μs I D - Amperes E OSS - MicroJoules 100 80 60 100μs 10 40 1 1ms TJ = 150ºC 20 TC = 25ºC Single Pulse Fig. 15. Maximum Transient Thermal Impedance 10ms 0.1 01 0 100 200 300 400 500 600 700 800 10 900 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_66N85X (U8-D901) 4-8-16 IXFK66N85X IXFX66N85X PLUS247 Outline 1 - Gate 2,4 - Drain 3 - Source TO-264P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFK66N85X IXFX66N85X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved