IXFK78N50P3

IXFK78N50P3 IXFX78N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 = = 500V 78A  68m 250ns RDS(on)   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G D S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 500 500 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 78 200 A A IA EAS TC = 25C TC = 25C 39 1.5 A J PD TC = 25C 1130 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g Tab PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features        Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C ©2019 IXYS CORPORATION, All Rights Reserved   Easy to Mount Space Savings V Applications 5.0 V  200 nA 25 A 3 mA     68 m  DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100313B(6/19) IXFK78N50P3 IXFX78N50P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs 9.9 nF pF 5.0 pF 1.1  30 ns 10 ns 60 ns 7 ns 147 nC 50 nC 38 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) S 970 Crss RGi 75 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.11C/W RthCS 0.15C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 78 A Repetitive, Pulse Width Limited by TJM 310 A IF = IS , VGS = 0V, Note 1 1.5 V IF = 39A, -di/dt = 100A/s 1.2 VR = 100V, VGS = 0V 13.0 250 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK78N50P3 IXFX78N50P3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 80 160 VGS = 10V 7V 70 VGS = 10V 8V 140 60 120 50 100 I D - Amperes I D - Amperes 7V 6V 40 30 80 60 6V 40 20 10 20 5V 5V 0 0 0 1 2 3 4 5 0 6 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 39A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 80 3.4 VGS = 10V 7V 70 60 6V 50 40 30 20 VGS = 10V 3.0 RDS(on) - Normalized I D - Amperes 15 VDS - Volts VDS - Volts 2.6 I D = 78A 2.2 I D = 39A 1.8 1.4 1.0 5V 10 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 39A Value vs. Drain Current 3.2 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 80 2.8 o TJ = 125 C 2.6 70 2.4 60 I D - Amperes RDS(on) - Normalized 50 90 VGS = 10V 3.0 25 TJ - Degrees Centigrade 2.2 2.0 1.8 1.6 50 40 30 1.4 20 o 1.2 TJ = 25 C 10 1.0 0.8 0 0 20 40 60 80 100 I D - Amperes ©2019 IXYS CORPORATION, All Rights Reserved 120 140 160 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK78N50P3 IXFX78N50P3 Fig. 7. Input Admittance Fig. 8. Transconductance 90 140 o TJ = - 40 C 80 120 70 TJ = 125 C 60 25 C o - 40 C o 100 g f s - Siemens I D - Amperes o 50 40 30 o 25 C 80 o 125 C 60 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 Fig. 10. Gate Charge 10 240 VDS = 250V 9 200 I D = 39A 8 I G = 10mA 7 VGS - Volts 160 I S - Amperes 50 I D - Amperes 120 80 o 125oC 6 5 4 3 T TJJ = = 125 C o TJ = 25 C 40 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 60 80 100 120 140 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 160 1000 f = 1 MHz Ciss RDS(on) Limit 10,000 100μs 100 I D - Amperes Capacitance - PicoFarads 20 VSD - Volts 1,000 Coss 100 10 o TJ = 150 C Crss 10 o TC = 25 C Single Pulse 1 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFK78N50P3 IXFX78N50P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds ©2019 IXYS CORPORATION, All Rights Reserved 1 10 IXFK78N50P3 IXFX78N50P3 TO-264 Outline 1 = Gate 2,4 = Drain 3 = Source PLUS247TM Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_78N50P3(K8-N38) 3-15-11 IXFK78N50P3 IXFX78N50P3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. ©2019 IXYS CORPORATION, All Rights Reserved