IXFK80N20

HiPerFETTM Power MOSFETs VDSS IXFK72N20 IXFK80N20 ID25 RDS(on) 200 V 72 A 35 mW 200 V 80 A 30 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 72N20 80N20 72 80 A A IDM TC = 25°C, pulse width limited by TJM 72N20 80N20 288 320 A A IAR TC = 25°C 74 A EAR TC = 25°C 45 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C 5 V/ns 360 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 - °C 0.9/6 Nm/lb.in. 10 g TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-264 AA G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features • International standard packages • Molding epoxies meet UL 94 V-0 flammability classification • Low RDS (on) HDMOSTM process • Unclamped Inductive Switching (UIS) rated • Fast intrinsic rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 V ±100 nA DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls TJ = 25°C TJ = 125°C 200 1 mA mA Advantages 72N20 80N20 Pulse test, t £ 300 ms, duty cycle d £ 2 % 35 30 mW mW VDSS VGS = 0 V, ID = 1 mA 200 VGS(th) VDS = VGS, ID = 4 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V,ID = 0.5 • ID25 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V • • • • • Easy to mount • Space savings • High power density 97523C (07/00) 1-4 IXFK72N20 Symbol gfs Test Conditions VDS Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. = 10 V; ID = 0.5 • ID25, pulse test Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS td(off) RG = (External), = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 35 S 5900 pF 1140 pF 480 pF 40 ns 55 ns 120 ns 26 ns Dim. 280 nC 39 nC 120 nC A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 0.35 RthCK 0.15 Source-Drain Diode Symbol Test Conditions K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS= 0 V 72N20 80N20 72 80 A A ISM Repetitive; pulse width limited by TJM 72N20 80N20 288 320 A A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 200 ns mC A t rr QRM IRM IF = IS, -di/dt = 100 A/ms, VR = 100 V © 2000 IXYS All rights reserved TO-264 AA Outline 42 RthJC 1.2 10 IXFK80N20 Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 2-4 IXFK72N20 200 160 160 7V 120 80 6V 40 0 4 8 12 120 7V 80 6V 40 5V 0 5V 16 0 20 0 4 8 VDS - Volts 16 20 Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25 C 2.4 3.2 VGS = 10V VGS = 10V 2.8 RDS(ON) - Normalized RDS(ON) - Normalized 12 VDS - Volts O Tj = 1250 C 2.4 2.0 T j =250 C 1.6 2.0 ID = 80A 1.6 ID = 40A 1.2 1.2 0.8 0 50 100 150 200 0.8 25 250 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value Figure 4. RDS(on) normalized to 0.5 ID25 value 160 100 80 IXFK80N20 IXFK72N20 60 40 o TJ = 25 C 80 40 20 0 -50 TJ = 125oC 120 ID - Amperes ID - Amperes VGS = 10V 9V 8V TJ = 125OC ID - Amperes ID - Amperes 200 VGS = 10V 9V 8V TJ = 25OC IXFK80N20 0 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 2 4 6 8 10 VGS - Volts Figure 6. Admittance Curves 3-4 IXFK72N20 10000 12 10 Ciss VDS = 100 V ID = 40 A IG = 1 mA 8 Capacitance - pF VGS - Volts IXFK80N20 6 4 f = 1MHz Coss 1000 Crss 2 0 100 0 50 100 150 200 250 300 0 350 5 10 15 25 30 35 40 VDS - Volts Gate Charge - nC Figure 8. Capacitance Curves Figure 7. Gate Charge 300 200 1 00 ID - Amperes 160 ID - Amperes 20 120 TJ = 25OC 80 1 ms 10 10 ms TC = 25OC TJ = 125OC 100 ms 40 DC 0 0.4 0.8 1.2 1.6 1 2.0 1 VSD - Volts 10 1 00 200 VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area 0.40 0.35 R(th)JC - K/W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.