IXFK80N50P

PolarHVTM HiPerFET Power MOSFET IXFK 80N50P IXFX 80N50P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGSM VGSM Transient Continuous ± 40 ± 30 V V ID25 IL IDM TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM 80 75 200 A A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 80 80 3.5 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 2 Ω 20 V/ns PD TC = 25° C 1040 W Maximum Ratings -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 20..120/4.5..25 N/lb TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds FC Mounting force (PLUS247) Md Mounting torque (TO-264) Weight TO-264 PLUS247 1.13/10 Nm/lb.in. 10 6 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 500 µA 500 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 © 2006 IXYS All rights reserved = 500 V = 80 A ≤ 65 mΩ Ω ≤ 200 ns TJ = 125° C TO-264 (IXFK) G D D (TAB) S PLUS247 (IXFX) D S G = Gate D = Drain D (TAB) S = Source Tab = Collector Features l l l International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V Advantages 5.0 V ± 200 nA l 25 2 µA mA l 65 l Easy to mount Space savings High power density mΩ DS99437E(03/06) IXFK 80N50P IXFX 80N50P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, Note 1 45 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss 70 S 12.7 nF 1280 pF 120 pF Crss td(on) 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 27 ns td(off) RG = 1 Ω (External) 70 ns 16 ns 197 nC 70 nC 64 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd 0.12 ° CW RthJC RthCS ° C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 80 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, 1.5 V trr IF = 25 A, -di/dt = 100 A/µs 200 ns QRM VR = 100 V, VGS = 0 V IRM 0.6 µC 6 A PLUS 247TM (IXFX) Outline Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 TO-264 (IXFK) Outline Notes: 1. Pulse test, t ≤300 µs, duty cycle d≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFK 80N50P IXFX 80N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25° C VGS = 10V 70 VGS = 10V 160 8V 60 7V 50 40 30 8V 140 I D - Amperes I D - Amperes @ 25° C 180 80 6V 20 120 7V 100 80 60 6V 40 10 20 5V 5V 0 0 0 1 2 3 4 5 6 0 3 6 9 V D S - Volts Fig. 3. Output Characteristics 80 18 21 24 27 3.4 VGS = 10V 70 3.1 R D S ( o n ) - Normalized 7V 60 I D - Amperes 15 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125° C 6V 50 40 30 20 5V 10 VGS = 10V 2.8 2.5 2.2 I D = 80A 1.9 1.6 I D = 40A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 -50 -25 V D S - Volts 25 50 75 100 125 150 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 90 3.2 3 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to VGS = 10V 80 TJ = 125°C 2.8 70 2.6 2.4 I D - Amperes R D S ( o n ) - Normalized 12 V D S - Volts 2.2 2 1.8 1.6 1.4 60 50 40 30 20 1.2 TJ = 25°C 1 10 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2006 IXYS All rights reserved 140 160 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK 80N50P IXFX 80N50P Fig. 8. Transconductance 140 140 120 120 100 100 80 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance TJ = 125°C 25°C 60 -40°C 60 40 20 20 0 0 4.5 5 5.5 6 6.5 7 25°C 125°C 80 40 4 TJ = -40°C 0 7.5 20 40 V G S - Volts 80 100 120 140 I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 250 VDS = 250V 9 VG S - Volts 200 I S - Amperes 60 150 100 8 I D = 40A 7 I G = 10mA 6 5 4 3 TJ = 125°C 50 2 TJ = 25°C 1 0 0 0.4 0.6 0.8 1 1.2 1.4 0 1.6 20 40 V S D - Volts 60 80 100 120 140 160 180 200 Q G - NanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100000 1000 R DS(on) Limit 10000 C iss I D - Amperes Capacitance - PicoFarads f = 1MHz 1000 C oss 100 25µs 100µs 1ms 10 100 TJ = 150°C C rss DC 10ms TC = 25°C 10 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFK 80N50P IXFX 80N50P Fig. 13. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds © 2006 IXYS All rights reserved 1 10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.