IXFK90N60X

Preliminary Technical Information IXFK90N60X IXFX90N60X X-Class HiPerFETTM Power MOSFET VDSS ID25 = = 600V 90A  38m RDS(on)  N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 600 600 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 90 200 A A IA EAS TC = 25C TC = 25C 45 3 A J PD TC = 25C 1100 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 1.13/10 Nm/lb.in  20..120 /4.5..27 N/lb  10 6 g g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) G D Tab S PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features   International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 600 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 4.5 V 100 nA High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved 50 A 1.5 mA 38 m DS100659B(8/15) IXFK90N60X IXFX90N60X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-264P Outline 50 S 1.0  8500 pF 6300 pF 56 pF 400 1.37 pF nF Crss E1 A E Q R Q1 D1 D R1 4 1 2 3 L1 D2 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS x2 e Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs c b1 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 38 ns 22 ns 84 ns 12 ns 210 nC 50 nC 90 nC b2 b A Terminals: 1 = Gate 2,4 = Drain 3 = Source 0.113 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM PLUS247TM Outline Characteristic Values Min. Typ. Max. 90 A Repetitive, Pulse Width Limited by TJM 360 A IF = IS, VGS = 0V, Note 1 1.4 V 210 IF = 45A, -di/dt = 100A/s 1.8 VR = 100V, VGS = 0V ns  μC 16.8 A Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK90N60X IXFX90N60X Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 220 90 VGS = 10V 9V 80 VGS = 10V 200 180 8V 70 9V 160 50 I D - Amperes I D - Amperes 60 7V 40 30 8V 120 100 80 60 6V 20 140 7V 40 10 20 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 90 3.4 VGS = 10V 8V 80 VGS = 10V 3.0 70 RDS(on) - Normalized 2.6 60 I D - Amperes 15 VDS - Volts 7V 50 6V 40 30 2.2 I D = 90A 1.8 I D = 45A 1.4 1.0 20 5V 0.6 10 4V 0.2 0 0 1 2 3 4 5 6 7 8 -50 9 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.0 150 1.4 VGS = 10V 1.3 BVDSS / VGS(th) - Normalized 3.5 R DS(on) - Normalized -25 VDS - Volts TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 1.2 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 20 40 60 80 100 120 140 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFK90N60X IXFX90N60X Fig. 8. Input Admittance 100 100 90 90 80 80 70 70 I D - Amperes I D - Amperes Fig. 7. Maximum Drain Current vs. Case Temperature 60 50 40 60 40 - 40ºC 30 30 20 20 10 10 0 TJ = 125ºC 25ºC 50 0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 300 90 80 TJ = - 40ºC 250 60 25ºC 50 200 I S - Amperes g f s - Siemens 70 125ºC 40 30 150 100 TJ = 125ºC 20 TJ = 25ºC 50 10 0 0 0 10 20 30 40 50 60 70 80 90 100 0 0.2 0.4 0.6 I D - Amperes 0.8 1 1.2 1.4 1.6 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 300V Ciss Capacitance - PicoFarads I D = 45A 8 V GS - Volts I G = 10mA 6 4 10,000 1,000 Coss 100 10 2 Crss f = 1 MHz 1 0 0 20 40 60 80 100 120 140 160 180 200 220 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFK90N60X IXFX90N60X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 60 RDS(on) Limit 100 25µs 100µs 40 I D - Am peres E OSS - M icroJoules 50 30 10 1 1ms 20 TJ = 150ºC 0.1 10 DC TC = 25ºC Single Pulse 10ms 100ms 0.01 0 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 14. Maximum Transient Thermal Impedance 1 Fig. 15. Maximum Transient Thermal Impedance aaaa 0.3 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_90N60X(J9-R4T45) 8-17-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.