IXFL210N30P3

Polar3TM HiPerFETTM Power MOSFET IXFL210N30P3 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = =   D RDS(on) trr S ISOPLUS264 300V 108A 16m 250ns G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 108 A IDM TC = 25C, Pulse Width Limited by TJM 550 A IA EAS TC = 25C TC = 25C 105 4 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 520 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 40..120 / 9..27 N/lb 2500 3000 V~ V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Mounting Force VISOL 50/60 Hz, RMS IISOL  1 mA G Weight       VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 105A, Note 1 V 5.0 V 200 nA Note 2, TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Easy to Mount Space Savings Applications  BVDSS = Drain Advantages  Characteristic Values Min. Typ. Max. D Features  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Isolated Tab S G = Gate S = Source  t = 1 min t=1s D 50 A 1.5 mA 16 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100464B(1/20) IXFL210N30P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 60 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 100 S 16.2 nF 2550 pF 42 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 1.0 Qgs   46 ns 25 ns 94 ns 13 ns 268 nC 80 nC 72 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS RG = 1 (External) Qg(on) ISOPLUS264 (IXFL) OUTLINE VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd RthJC 1 = Gate 2,4 = Drain 3 = Source 0.24C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 210 A ISM Repetitive, Pulse Width Limited by TJM 840 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM Notes: IF = 105A, -di/dt = 100A/s 4.1 28 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL210N30P3 Fig. 1. Output Characteristics @ TJ = 25ºC VGS = 10V 8V 200 300 VGS = 10V 8V 250 160 7V 7V I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 80 6V 200 150 6V 100 40 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 10 15 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature 3.0 VGS = 10V 8V 7V 200 VGS = 10V 2.6 RDS(on) - Normalized 160 I D - Amperes 5 VDS - Volts 6V 120 80 5V 2.2 I D = 210A 1.8 I D = 105A 1.4 1.0 40 0.6 4V 0 0 2.6 2.4 1 2 3 4 5 6 0.2 7 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 120 VGS = 10V 125 150 125 150 100 TJ = 125ºC 80 2.0 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 60 40 1.4 TJ = 25ºC 1.2 20 1.0 0.8 0 0 50 100 150 200 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFL210N30P3 Fig. 8. Transconductance Fig. 7. Input Admittance 200 200 TJ = - 40ºC 180 160 160 25ºC g f s - Siemens I D - Amperes 140 120 100 80 TJ = 125ºC 25ºC 60 120 125ºC 80 - 40ºC 40 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 300 VDS = 150V 9 250 I D = 105A 8 I G = 10mA 7 V GS - Volts 200 I S - Amperes 100 I D - Amperes 150 6 5 4 TJ = 125ºC 100 3 TJ = 25ºC 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 30 60 90 VSD - Volts Fig. 11. Capacitance 150 180 210 240 270 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Ciss 25µs 10,000 100 I D - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs Coss 1,000 100 100µs 10 1ms 1 TJ = 150ºC 10ms TC = 25ºC Single Pulse Crss 100ms DC 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFL210N30P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 © 2020 IXYS CORPORATION, All Rights Reserved 0.01 Pulse Width - Seconds 0.1 1 10 IXYS REF: F_210N30P3(K9) 6-22-12 IXFL210N30P3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.