IXFL30N120P

IXFL30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 18 A IDM TC = 25°C, Pulse Width Limited by TJM 80 A IA TC = 25°C 15 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 357 W Maximum Ratings -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic Body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s 2500 3000 V~ V~ 40..120/4.5..27 N/lb. 8 g FC = = ≤ ≤ Mounting Force Weight G S Isolated Tab D G = Gate S = Source D = Drain Features z z z Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Fast Intrinsic Diode Advantages z z z Easy Assembly Space Savings High Power Density Applications Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 15A, Note 1 Note 2, TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved V 6.5 V ± 200 nA 50 μA 5 mA 380 mΩ DS99890B(11/11) IXFL30N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 15A, Note 1 22 S 19 nF 960 pF 25 pF 1.70 Ω 57 ns 60 ns 95 ns 56 ns 310 nC 104 nC 137 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 15A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 15A Qgd RthJC 0.35 °C/W RthCS 0.15 Source-Drain Diode TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Notes: ISOPLUS i5-PakTM (IXFL) Outline °C/W Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 15A, -di/dt = 100A/μs 1.6 VR = 100V, VGS = 0V 14 μC A 1 = Gate 2 = Source 3 = Drain 4 = Isolated SYM INCHES MIN MAX MILLIMETER MIN MAX A 0.190 0.205 4.83 A1 0.102 0.118 2.59 5.21 3.00 A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 3.81 BSC L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 11.43 BSC 19.81 20.83 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 T 0.801 0.821 20.34 20.85 U 0.065 0.080 1.65 2.03 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL30N120P Fig. 1. Output Characteristics @ T J = @ 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 70 30 VGS = 10V ID - Amperes ID - Amperes 50 8V 20 15 10 VGS = 10V 9V 60 25 7V 40 8V 30 20 7V 5 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature 3.0 30 VGS = 10V 8V 20 VGS = 10V 2.6 R DS(on) - Normalized 25 ID - Amperes 5 VDS - Volts 7V 15 10 2.2 I D = 30A 1.8 I D = 15A 1.4 1.0 6V 5 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 20 2.4 VGS = 10V 18 TJ = 125ºC 16 2.2 14 2 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 12 10 8 1.4 6 1.2 4 TJ = 25ºC 1 2 0.8 0 0 10 20 30 40 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFL30N120P Fig. 8. Transconductance Fig. 7. Input Admittance 35 30 TJ = - 40ºC 30 25 25ºC 25 g f s - Siemens ID - Amperes 20 TJ = 125ºC 15 25ºC - 40ºC 125ºC 20 15 10 10 5 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 5 10 15 VGS - Volts 20 25 30 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 90 16 80 14 VDS = 600V I D = 15A 70 I G = 10mA 12 VGS - Volts IS - Amperes 60 50 40 TJ = 125ºC 10 8 6 30 TJ = 25ºC 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100,000 Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.1 0.01 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_30N120P(97)02-12-10-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.