IXFL32N120P

Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS(on) trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 24 A IDM TC = 25°C, Pulse Width Limited by TJM 100 A IA TC = 25°C 16 A EAS TC = 25°C 2 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 520 W -55 ... +150 °C TJM 150 °C z Tstg -55 ... +150 °C z TJ = = ≤ ≤ Maximum Ratings TL Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic Body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s 2500 3000 V~ V~ FC Mounting Force 40..120/4.5..27 N/lb. 8 g Weight G S Isolated Tab D G = Gate S = Source D = Drain Features z Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Fast Intrinsic Diode Advantages z z z Easy Assembly Space Savings High Power Density Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS , VGS = 0V Note 2, TJ = 125°C RDS(on) VGS = 10V, ID = 16A, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved V 6.5 V ± 300 nA Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives z Robotics and Servo Controls 50 μA 5 mA 340 mΩ DS99908B(01/10) IXFL32N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 17 VDS = 20V, ID = 16A, Note 1 29 S 21 nF 1105 pF 77 pF 0.84 Ω 70 ns 62 ns 88 ns 51 ns 360 nC 130 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 16A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 16A Qgd RthJC 0.15 Source-Drain Diode TJ = 25°C Unless Otherwise Specified) VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD trr QRM IRM Notes: IF = IS, VGS = 0V, Note 1 INCHES MIN MAX MILLIMETER MIN MAX 0.190 0.205 4.83 0.102 0.118 2.59 3.00 nC A2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 0.24 °C/W b1 0.063 0.072 1.60 1.83 °C/W b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 D 1.020 1.040 25.91 26.42 E 0.770 0.799 19.56 20.29 e 0.150 BSC e1 L 0.450 BSC 0.780 0.820 5.21 3.81 BSC 11.43 BSC 19.81 20.83 L1 0.080 0.102 2.03 2.59 32 A Q 0.210 0.235 5.33 5.97 128 A Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 R1 0.100 0.130 2.54 3.30 S 0.668 0.690 16.97 17.53 1.5 V 300 ns T 0.801 0.821 20.34 20.85 1.9 μC U 0.065 0.080 1.65 2.03 15.0 A IF = 25A, -di/dt = 100A/μs VR = 100V, VGS = 0V SYM A Characteristic Values Min. Typ. Max. IS PIN 1 = Gate PIN 2 = Source PIN 3 = Drain Tap 4 = Electricall isolated 2500V A1 160 RthCS ISOPLUS i5-PakTM (IXFL) Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Ices measurement. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFL32N120P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 70 32 VGS = 10V 9V 28 60 24 50 8V 20 ID - Amperes ID - Amperes VGS = 10V 9V 16 12 40 8V 30 20 8 7V 10 4 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 32 25 30 3.0 VGS = 10V 8V 28 VGS = 10V 2.6 R DS(on) - Normalized 24 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics T J = 125ºC 20 16 7V 12 8 2.2 I D = 32A 1.8 I D = 16A 1.4 1.0 0.6 6V 4 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 28 VGS = 10V 2.4 24 TJ = 125ºC 2.2 20 2.0 ID - Amperes R DS(on) - Normalized 15 VDS - Volts VDS - Volts 1.8 1.6 16 12 1.4 8 TJ = 25ºC 1.2 4 1.0 0.8 0 0 10 20 30 40 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFL32N120P Fig. 8. Transconductance Fig. 7. Input Admittance 50 70 TJ = - 40ºC 45 60 40 50 30 TJ = 125ºC 25ºC - 40ºC 25 25ºC g f s - Siemens ID - Amperes 35 20 40 125ºC 30 15 20 10 10 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 400 450 500 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 16 90 14 VDS = 600V I D = 16A 80 I G = 10mA 12 VGS - Volts IS - Amperes 70 60 50 TJ = 125ºC 40 10 8 6 TJ = 25ºC 30 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 VSD - Volts 150 200 250 300 350 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forwar-Bias Safe Operating Area 100,000 1000 100 Ciss 10,000 25µs ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 Coss 100µs 10 1ms 1 10ms 100ms 100 TJ = 150ºC Tc = 25ºC Single Pulse 0.1 Crss f = 1 MHz 10 DC 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXFL32N120P Fig. 13. Maximum Transient Thermal Impedance 1.000 Z(th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N120P(99)1-22-10-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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