IXFL38N100P

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL38N100P VDSS ID25 RDS(on) trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 29A Ω 230mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 29 A IDM TC = 25°C, Pulse Width Limited by TJM 120 A IA TC = 25°C 19 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 520 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C TL Maximum Lead Temperature for Soldering 300 °C TSOLD Plastic Body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute IISOL ≤ 1mA t = 1s 2500 3000 V~ V~ FC Mounting Force 40..120/4.5..27 N/lb. 8 g Weight G D G = Gate S = Source BVDSS VGS = 0V, ID = 3mA 1000 Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 2500V Electrical Isolation z International Standard Packages z miniBLOC, with Aluminium Nitride Isolation z Low Drain to Tab Capacitance(