IXFL44N100P

PolarTM Power MOSFET HiPerFETTM IXFL44N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 22A Ω 240mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR 22 A 110 A TC = 25°C 22 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 357 W -55 ... +150 °C Features TJM 150 °C • Silicon chip on Direct-Copper-Bond Tstg -55 ... +150 °C TJ G S D G = Gate S = Source TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ • • • IISOL ≤ 1mA 3000 V~ • 40..120/4.5..27 N/lb. 8 g FC t = 1s Mounting force Weight Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 22A, Note 1 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved V 6.5 V ± 200 nA 50 μA 3 mA substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(