IXFN100N50P

IXFN100N50P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D = =   500V 90A  49m 200ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 90 A IDM TC = 25C, Pulse Width Limited by TJM 250 A IA EAS TC = 25C TC = 25C 100 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 1040 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 Applications V 5.0 V 200 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 25 A 2 mA 49 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation DS99497F(8/17) IXFN100N50P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 50 VDS = 20V, ID = 50A, Note 1 80 S 20 nF 1700 pF 140 pF 36 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 1 (External) Qg(on) Qgs SOT-227B (IXFN) Outline 29 ns 110 ns 26 ns 240 nC 96 nC 78 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 50A Qgd (M4 screws (4x) supplied) 0.12C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 250 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 25A, -di/dt = 100A/s Note 0.6 6.0 VR = 100V, VGS = 0V 200 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN100N50P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 220 VGS = 10V 8V 90 180 80 7V I D - Amperes 60 50 40 6V 30 8V 160 70 I D - Amperes VGS = 10V 9V 200 140 120 7V 100 80 60 20 40 10 20 5V 0 6V 0 0 1 2 3 4 5 0 5 10 20 25 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 100 3.2 VGS = 10V 90 VGS = 10V 2.8 80 7V RDS(on) - Normalized 70 I D - Amperes 15 VDS - Volts VDS - Volts 60 50 6V 40 30 2.4 I D = 100A 2.0 I D = 50A 1.6 1.2 20 5V 10 0.8 0 0.4 0 2 4 6 8 10 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current 3.2 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 100 VGS = 10V 2.8 80 2.4 I D - Amperes RDS(on) - Normalized o TJ = 125 C 2.0 1.6 60 40 o TJ = 25 C 20 1.2 0 0.8 0 20 40 60 80 100 120 140 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN100N50P Fig. 7. Input Admittance Fig. 8. Transconductance 160 160 140 140 120 120 o TJ = - 40 C o 80 g f s - Siemens I D - Amperes 25 C 100 o TJ = 125 C o 25 C 60 o 100 o 125 C 80 60 - 40 C 40 40 20 20 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 20 40 VGS - Volts 80 100 120 140 160 180 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 250V 9 250 I D = 50A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 60 150 100 6 5 4 3 o TJ = 125 C 2 50 o TJ = 25 C 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 50 VSD - Volts 100 150 200 250 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit 10,000 100μs 100 I D - Amperes Capacitance - PicoFarads Ciss Coss 1,000 1ms 10 10ms o TJ = 150 C DC o TC = 25 C Single Pulse Crss 100 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN100N50P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: IXF_100N50P (9S-745) 2-08-06-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.