IXFN100N50Q3

IXFN100N50Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr = =   500V 82A 49m 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 82 A IDM TC = 25C, Pulse Width Limited by TJM 300 A IA TC = 25C 100 A EAS TC = 25C 5 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 960 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 Applications V 6.5 V 200 nA TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 2.5 mA      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 49 m DS100308A(1/20) IXFN100N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = 20V, ID = 50A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf S 13.8 nF 1690 pF 177 pF 0.12  ns 20 ns 50 ns 15 ns 255 nC 110 nC 115 nC RG = 0.5 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 50A Qgd  40 VGS = 10V, VDS = 0.5 • VDSS, ID = 50A Qg(on) Qgs 65 RthJC 0.13C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 400 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM Note IF = 50A, -di/dt = 200A/s 3.5 30.0 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN100N50Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 100 VGS = 10V 9V 90 VGS = 10V 200 80 160 60 I D - Amperes I D - Amperes 70 8V 50 40 9V 120 8V 80 30 20 7V 40 7V 10 6V 6V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 5 10 15 100 3.2 VGS = 10V V GS = 10V RDS(on) - Normalized 8V 70 I D - Amperes 30 2.8 80 60 50 7V 40 30 20 6V 10 2.4 I D = 100A 2.0 1.6 I D = 50A 1.2 0.8 5V 0 0.4 0 3.0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature V GS = 10V 2.8 125 150 125 150 80 o TJ = 125 C 2.6 2.4 60 2.2 I D - Amperes RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 90 20 VDS - Volts VDS - Volts 2.0 1.8 1.6 40 1.4 20 1.2 o TJ = 25 C 1.0 0 0.8 0 20 40 60 80 100 120 140 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN100N50Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 140 110 o TJ = - 40 C 100 120 90 80 g f s - Siemens I D - Amperes o 80 100 o TJ = 125 C o 25 C 60 o - 40 C 40 25 C 70 o 125 C 60 50 40 30 20 20 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 20 40 VGS - Volts 100 120 140 16 VDS = 250V 14 I D = 50A 250 I G = 10mA 12 200 V GS - Volts I S - Amperes 80 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 150 100 10 8 6 o TJ = 125 C o 4 TJ = 25 C 50 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 50 100 VSD - Volts 150 200 250 300 350 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100000 f = 1 MHz RDS(on) Limit Ciss 10000 25µs 100 I D - Amperes Capacitance - PicoFarads 60 I D - Amperes Coss 1000 100µs 10 o TJ = 150 C o TC = 25 C Single Pulse Crss 100 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN100N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N50Q3(Q9)02-24-11 IXFN100N50Q3 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN100N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved