IXFN100N65X2

IXFN100N65X2 X2-Class HiPerFETTM Power MOSFET VDSS ID25 650V 78A  30m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = G S miniBLOC, SOT-227 E153432  S S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 78 200 A A IA EAS TC = 25C TC = 25C 15 3.5 A J PD TC = 25C 595 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight G 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g S D G = Gate S = Source D = Drain Features        International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 50A, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved   High Power Density Easy to Mount Space Savings V 5.0 V 100 nA 50 A 5 mA 30 m Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100707A(03/16) IXFN100N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 50A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 40 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 68 S 0.7  10.8 nF 6000 pF 2.6 pF 365 1500 pF pF 37 ns 26 ns 90 ns 13 ns 183 nC Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 50A RG = 2(External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 50A Qgd 60 nC 62 nC RthJC 0.21C/W RthCS 0.05C/W (M4 screws (4x) supplied) Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 100 A ISM Repetitive, Pulse Width Limited by TJM 400 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM 200 IF = 50A, -di/dt = 100A/s 1.7 VR = 100V, VGS = 0V 17.2 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN100N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 100 240 VGS = 10V 8V 90 VGS = 10V 9V 200 80 7V 8V 160 I D - Amperes I D - Amperes 70 60 50 6V 40 120 7V 80 30 6V 20 40 10 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 100 3.4 VGS = 10V 8V 90 15 VDS - Volts VGS = 10V 3.0 7V 80 RDS(on) - Normalized 2.6 I D - Amperes 70 6V 60 50 40 30 5V I D = 100A 2.2 1.8 I D = 50A 1.4 1.0 20 0.6 10 4V 0.2 0 0 1 2 3 4 5 6 7 -50 8 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.5 150 1.3 VGS = 10V 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 R DS(on) - Normalized -25 VDS - Volts TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 100 120 140 160 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 180 200 220 240 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN100N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 90 140 80 120 70 100 I D - Amperes I D - Amperes 60 50 40 TJ = 125ºC 25ºC - 40ºC 80 60 30 40 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 140 200 TJ = - 40ºC 180 120 160 140 25ºC 80 I S - Amperes g f s - Siemens 100 125ºC 60 120 100 80 TJ = 125ºC 60 40 TJ = 25ºC 40 20 20 0 0 0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V Capacitance - PicoFarads I D = 50A 8 V GS - Volts I G = 10mA 6 4 2 10,000 Ciss 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN100N65X2 Fig. 13. Output Capacitance Stored Energy 90 Fig. 14. Forward-Bias Safe Operating Area 1000 80 RDS(on) Limit 100 25µs 60 I D - Amperes E OSS - MicroJoules 70 50 40 100µs 10 30 1 20 1ms TJ = 150ºC TC = 25ºC Single Pulse 10 10ms DC 0 0.1 0 100 200 300 400 Fig.500 15. Maximum Transient Thermal Impedance 600 1 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_100N65X2(X8-S602) 2-12-16_A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.