IXFN110N60P3

IXFN110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   600V 90A  56m 250ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 90 A 275 A TC = 25C TC = 25C 55 3 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 1500 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 55A, Note 1 © 2014 IXYS CORPORATION, All Rights Reserved Applications V 5.0 Easy to Mount Space Savings   V  200 nA  50 A 2.75 mA 56 m   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100305B(9/14) IXFN110N60P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 20V, ID = 55A, Note 1 105 S 18 nF 1550 pF 8 pF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 1.2 VGS = 10V, VDS = 0.5 • VDSS, ID = 55A RG = 1 (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 55A Qgd   63 ns 30 ns 106 ns 15 ns 254 nC 80 nC 68 nC RthJC (M4 screws (4x) supplied) 0.083C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 440 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM Note IF = 55A, -di/dt = 100A/s 1.6 14.0 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN110N60P3 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 200 VGS = 10V 8V 100 VGS = 10V 180 8V 160 7V 140 60 I D - Amperes I D - Amperes 80 6.5V 40 7V 120 100 80 6.5V 60 6V 40 20 6V 20 5V 5V 0 0 0 1 2 3 4 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.4 VGS = 10V 7V 100 VGS = 10V 3.0 60 RDS(on) - Normalized I D - Amperes 80 6V 40 2.6 I D = 110A 2.2 I D = 55A 1.8 1.4 1.0 20 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 100 3.0 VGS = 10V 2.6 80 2.2 I D - Amperes RDS(on) - Normalized TJ = 125ºC 1.8 1.4 60 40 TJ = 25ºC 20 1.0 0.6 0 0 20 40 60 80 100 120 140 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN110N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 180 200 160 180 TJ = - 40ºC 160 140 TJ = 125ºC 25ºC - 40ºC 25ºC 140 g f s - Siemens I D - Amperes 120 100 80 120 125ºC 100 80 60 60 40 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 Fig. 10. Gate Charge 300 10 VDS = 300V 9 250 I D = 55A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes 150 100 TJ = 125ºC 6 5 4 3 TJ = 25ºC 50 2 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 VSD - Volts 80 120 160 200 240 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 Ciss 100 1,000 I D - Amperes Capacitance - PicoFarads RDS(on) Limit 10,000 Coss 100 100µs 10 TJ = 150ºC 10 TC = 25ºC Single Pulse Crss f = 1 MHz 1 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN110N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_110N60P3(K9) 9-25-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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