IXFN110N85X

Advance Technical Information IXFN110N85X X-Class HiPerFETTM Power MOSFET VDSS ID25 850V 110A  33m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = G S miniBLOC, SOT-227 E153432  S S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 850 850 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 110 220 A A IA EAS TC = 25C TC = 25C 55 3 A J PD TC = 25C 1170 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque Weight G 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g S D G = Gate S = Source D = Drain Features        International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 850 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 55A, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved   High Power Density Easy to Mount Space Savings V 5.5 V 200 nA 50 A 5 mA 33 m Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100731(6/16) IXFN110N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 55A, Note 1 43 RGi Gate Input Resistance 72 S 0.55  17 nF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 16 nF 260 pF 470 2170 pF pF 50 ns 25 ns 144 ns 11 ns 425 nC Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 55A RG = 1(External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 55A Qgd 105 nC 225 nC RthJC 0.107C/W RthCS 0.05C/W (M4 screws (4x) supplied) Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 440 A VSD IF = IS , VGS = 0V, Note 1 1.4 V trr QRM IRM 205 IF = 55A, -di/dt = 300A/s 5.5 VR = 100V, VGS = 0V ns  μC 54.0 A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN110N85X Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 250 110 VGS = 10V VGS = 10V 100 9V 90 200 8V 70 I D - Amperes I D - Amperes 80 60 7V 50 40 8V 150 100 7V 30 20 50 6V 6V 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 110 VGS = 10V 100 15 VDS - Volts VGS = 10V 8V 2.6 90 R DS(on) - Normalized I D - Amperes 80 7V 70 60 50 40 6V 30 20 2.2 I D = 110A 1.8 I D = 55A 1.4 1.0 0.6 10 5V 0 0 1 2 3 4 5 6 7 0.2 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 150 1.3 3.0 VGS = 10V 1.2 RDS(on) - Normalized 2.6 BVDSS / VGS(th) - Normalized TJ = 125ºC 2.2 1.8 1.4 TJ = 25ºC 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.6 0.5 0 50 100 150 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 200 250 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN110N85X Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 160 120 140 100 120 I D - Amperes I D - Amperes 80 60 TJ = 125ºC 25ºC - 40ºC 100 80 60 40 40 20 20 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 8.0 8.5 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 140 300 TJ = - 40ºC 120 250 25ºC 200 I S - Amperes g f s - Siemens 100 125ºC 80 60 150 TJ = 125ºC 100 40 TJ = 25ºC 50 20 0 0 0 20 40 60 80 100 120 140 0.3 160 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 11. Gate Charge Fig. 12. Capacitance 10 100 VDS = 425V VGS - Volts Capacitance - NanoFarads I D = 55A 8 I G = 10mA 6 4 2 10 Ciss 1 Coss 0.1 0.01 f = 1 MHz 0 Crss 0.001 0 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN110N85X Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 160 140 RDS(on) Limit 100 100 I D - Amperes E OSS - MicroJoules 120 80 60 25µs 100µs 10 1ms 40 1 TJ = 150ºC TC = 25ºC 20 Single Pulse Fig. 15. Maximum Transient Thermal Impedance 10ms DC 01 0.1 0 100 200 300 400 500 600 700 800 900 1 10 VDS - Volts 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_110N85X (U9-D307) 6-06-16