IXFN120N20

IXFN 120N20 HiPerFETTM Power MOSFETs VDSS ID25 = 200 V = 120 A Ω = 17 mΩ Single MOSFET Die RDS(on) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 250 ns Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 120 480 120 A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 600 W TJ -55 ... +150 °C Features TJM Tstg 150 -55 ... +150 °C °C - °C 2500 3000 V~ V~ • Encapsulating epoxy meets UL 94 V-0, flammability classification • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 8mA 2 IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2003 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4 V ±200 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 17 mΩ • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount • Space savings • High power density DS96538D(03/03) IXFN 120N20 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 77 S 9100 pF 2200 pF Crss 1000 pF td(on) 42 ns 55 ns 110 ns 40 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 160 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Test Conditions IS VGS = 0 V 120 A ISM Repetitive; pulse width limited by TJM 480 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns trr IF = 50A,-di/dt = 100 A/µs, VR = 100 V Inches Min. nC Symbol QRM Millimeter Min. Max. 50 0.22 Source-Drain Diode Dim. nC RthJC RthCK M4 screws (4x) supplied 360 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd miniBLOC, SOT-227 B 1.1 µC 13 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFN 120N20 Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ 25 deg. C @ 25 Deg. C 120 180 VGS = 10V 9V 8V 7V 80 VGS = 10V 9V 8V 150 6V ID - Amperes ID - Amperes 100 60 5V 40 20 120 6V 90 60 5V 30 0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 V DS - Volts 4 5 Fig. 4. R DS(on) Norm alized to I D25 Value vs. Junction Temperature @ 125 Deg. C 120 2.5 VGS = 10V 9V 8V 7V 80 VGS = 10V 2.2 RDS(on) - Normalized 100 ID - Amperes 3 V DS - Volts Fig. 3. Output Characteristics 6V 60 40 5V 20 1.9 1.6 ID = 120A 1.3 ID = 60A 1 0.7 0.4 0 0 1 2 3 4 -50 5 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. R DS(on) Norm alized to I D25 Fig. 6. Drain Current vs. Case Value vs. I D Tem perature 140 2.2 VGS = 10V 120 1.9 T J = 125ºC 100 ID - Amperes RDS(on) - Normalized 7V 1.6 1.3 T J = 25ºC 80 60 40 1 20 0.7 0 0 30 60 90 120 ID - Amperes © 2003 IXYS All rights reserved 150 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFN 120N20 Fig. 8. Transconductance Fig. 7. Input Adm ittance 120 150 Gfs - Siemens ID - Amperes T J = 25ºC 100 120 90 T J = -40ºC 25ºC 125ºC 60 80 60 40 30 20 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 30 60 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain 200 10 160 8 VGS - Volts IS - Amperes 120 150 180 250 300 Fig. 10. Gate Charge Voltage 120 T J = 125ºC 80 90 ID - Amperes VDS = 100V ID = 60A IG = 10mA 6 4 T J = 25ºC 40 2 0 0 0.4 0.55 0.7 0.85 1 1.15 1.3 0 V SD - Volts 50 100 150 200 QG - nanoCoulombs Fig. 12. Maxim um Transient Therm al Fig. 11. Capacitance Resistance 1 10000 f = 1M Hz R(th)JC - (ºC/W) Capacitance - pF C iss C oss 1000 C rss 100 0.1 0.01 0 5 10 15 20 25 30 35 40 1 V DS - Volts 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.