IXFN160N30T

Preliminary Technical Information IXFN160N30T GigaMOSTM Power MOSFET VDSS ID25 = = 300V 130A  19m 200ns RDS(on)   trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V G VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 130 A IDM TC = 25C, Pulse Width Limited by TJM 440 A IA EAS TC = 25C TC = 25C 80 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 900 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL  1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight S D G = Gate S = Source Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features  International Standard Package miniBLOC, with Aluminium Nitride Isolation  Isolation voltage 2500 V~  High Current Handling Capability  Fast Intrinsic Diode  Avalanche Rated  Low RDS(on)  Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 80A, Note 1 V 5.0 V TJ = 125C  nA  50 A 3 mA  19 m    © 2014 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density Applications  200 D = Drain DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100128A(9/14) IXFN160N30T Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 90 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 150 S 24.5 nF 1825 pF 45 pF 1.1  34 ns 68 ns 90 ns 23 ns 376 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 15V, VDS = 0.5 • VDSS, ID = 80A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 80A SOT-227B (IXFN) Outline 140 nC 56 nC Qgd RthJC 0.138C/W RthCS 0.05C/W (M4 screws (4x) supplied) Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 160 A ISM Repetitive, Pulse Width Limited by TJM 640 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 80A, -di/dt = 100A/s VR = 75V, VGS = 0V 1.09 200 ns  C 13 A Note 1: Pulse test, t  300s, duty cycle, d  2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN160N30T Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 160 300 VGS = 10V VGS = 10V 7V 140 250 7V 200 100 I D - Amperes I D - Amperes 120 6V 80 60 150 6V 100 40 50 20 5V 5V 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 4 6 8 10 12 14 16 18 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 80A Value vs. Junction Temperature 2.8 160 VGS = 10V 7V 140 120 VGS = 10V 6V 100 80 60 5V 40 20 2.4 RDS(on) - Normalized I D - Amperes 2 VDS - Volts 2.0 I D = 160A 1.6 I D = 80A 1.2 0.8 20 4V 0 0.4 0 1 2 3 4 5 6 -50 7 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 80A Value vs. Drain Current 2.6 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 140 2.4 25 TJ - Degrees Centigrade VGS = 10V 120 TJ = 125ºC 2.0 100 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25ºC 1.2 80 60 40 1.0 20 0.8 0.6 0 0 40 80 120 160 200 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 240 280 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN160N30T Fig. 7. Input Admittance Fig. 8. Transconductance 200 300 180 140 200 TJ = 125ºC 25ºC - 40ºC 120 g f s - Siemens I D - Amperes TJ = - 40ºC 250 160 100 80 60 25ºC 150 125ºC 100 40 50 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0 6.6 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 180 200 Fig. 10. Gate Charge 10 300 9 250 VDS = 150V I D = 80A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes 80 I D - Amperes 150 100 TJ = 125ºC 6 5 4 3 2 TJ = 25ºC 50 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 50 100 Fig. 11. Capacitance 200 250 300 350 Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000 f = 1 MHz RDS(on) Limit Ciss 10,000 25µs 1,000 - Amperes 100 100µs D C oss I Capacitance - PicoFarads 150 QG - NanoCoulombs VSD - Volts 100 10 1ms TJ = 150ºC C rss TC = 25ºC Single Pulse 10 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFN160N30T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 90 90 RG = 1Ω, VGS = 15V RG = 1Ω, VGS = 15V 80 80 VDS = 150V 70 t r - Nanoseconds t r - Nanoseconds Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 60 I D = 80A 50 I D = 160A 40 VDS = 150V TJ = 25ºC 70 60 50 TJ = 125ºC 40 30 20 30 25 35 45 55 65 75 85 95 105 115 80 125 90 100 110 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 300 tr 260 td(on) - - - - 140 28 120 26 TJ = 125ºC, VGS = 15V 80 I D = 160A I D = 80A 140 60 100 40 60 20 20 0 1 2 3 4 5 6 7 8 9 tf td(off) - - - - 110 22 I D = 160A 20 90 18 80 35 45 55 t f - Nanoseconds 75 85 95 105 115 70 125 100 20 90 18 80 16 120 130 140 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 150 70 160 560 td(off) - - - - 480 TJ = 125ºC, VGS = 15V VDS = 150V 500 400 400 320 I D = 160A I D = 80A 300 240 200 160 100 80 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d ( o f f ) - Nanoseconds TJ = 25ºC, 125ºC tf 600 t d ( o f f ) - Nanoseconds 110 110 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 700 120 VDS = 150V 100 100 I D = 80A 25 td(off) - - - - 24 90 120 RG = 1Ω, VGS = 15V 16 130 RG = 1Ω, VGS = 15V 80 130 24 10 t f - Nanoseconds tf 22 160 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 26 150 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature RG - Ohms 28 140 VDS = 150V t f - Nanoseconds t r - Nanoseconds 180 130 t d ( o f f ) - Nanoseconds 100 t d ( o n ) - Nanoseconds VDS = 150V 220 120 I D - Amperes IXFN160N30T Fig. 19. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_160N30T (9E-N32) 9-18-14-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.