IXFN170N10

HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS(on) trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C 100 100 100 100 V V VGS VGSM Continuous Transient ±20 ±30 ±20 ±30 V V ID25 ID125„ IDM‚ IAR TC = 25°C TC = 125°C T C = 25°C TC = 25°C 170ƒ 76 680 170 170 NA 680 170 A A A EAR TC = 25°C 60 60 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 5 V/ns PD TC = 25°C TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL £ 1 mA Md Mounting torque Terminal connection torque 300 t = 1 min t=1s N/A N/A N/A 2500 3000 0.9/6 N/A Weight Min. VDSS 100 VGS= 0 V, ID = 3mA VDSS temperature coefficient IGSS VGS= ±20V, VGS = 0V IDSS VDS= 0.8 • VDSS V VGS= 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 30 g Characteristic Values Typ. Max. 2 V %/K 4 V %/K ±200 nA 400 2 mA mA 10 mW -0.183 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved °C V~ V~ 0.077 VDS = VGS, ID = 8mA VGS(th) temperature coefficient °C 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VGS(th) 600 W -55 ... +150°C 150 -55 ... +150°C 1.6 mm (0.063 in) from case for 10 s D D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G S 560 TL G D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Low package inductance · Fast intrinsic Rectifier Applications · DC-DC converters · Synchronous rectification · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · Temperature and lighting controls · Low voltage relays Advantages · Easy to mount · Space savings · High power density 97505D (7/00) 1-4 IXFK170N10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 0.5 • ID25, pulse test 65 pF 2,200 pF C rss 1,200 pF td(on) 40 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) R G = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B 90 ns 158 ns 79 ns 515 nC 62 nC 276 nC 0.22 0.15 K/W K/W 0.21 0.05 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions TO-264 AA Outline S 10,300 C iss IXFN170N10 K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Characteristic Values Min. Typ. Max. miniBLOC, SOT-227 B IS VGS = 0 170 A ISM Repetitive; pulse width limited by TJM 680 A VSD IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V t rr Q RM IRM I F = 50 A, -di/dt = 100 A/ms, V R = 100 V 175 1.1 12.6 ns mC A M4 screws (4x) supplied Notes: 1. RGS = 1 MW 2. Pulse width limited by TJM. 3. Chip capability 4. Current limited by external leads © 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK170N10 Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 300 300 TJ=25OC 250 ID - Amperes ID - Amperes 200 150 6V 100 5V 50 0 2 4 6 8 7V 150 6V 100 5V 50 10 0 2 4 Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID VGS=10V 1.4 1.2 TJ = 25OC 1.0 0.8 0 50 100 150 10 2.2 RDS(ON) - Normalized RDS(ON) - Normalized 1.6 8 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ TJ = 125OC VGS = 10V 6 VDS - Volts VDS - Volts 1.8 8V 200 0 0 VGS=10V 9V TJ=125OC VGS=10V 9V 8V 7V 250 0.6 IXFN170N10 200 250 2.0 1.8 ID=85A 1.4 1.2 1.0 25 300 ID=170A 1.6 50 ID - Amperes 75 100 125 150 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 200 100 175 80 ID - Amperes ID - Amperes 150 125 100 75 50 TJ = 125oC 40 TJ = 25oC 20 25 0 -50 60 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0 0 2 4 6 8 10 VGS - Volts 3-4 IXFK170N10 Figure 7. Gate Charge Figure 8. Capacitance Curves 12 18000 Vds= 50V ID = 85A IG =10mA 15000 Capacitance - pF 10 VGS - Volts IXFN170N10 8 6 4 f = 1MHz 12000 Ciss 9000 6000 2 3000 0 0 Coss Crss 0 100 200 300 400 500 600 0 10 Gate Charge - nC 20 30 40 V DS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 300 Figure10. Forward Bias Safe Operating Area 170 1 00 250 ID - Amperes ID - Amperes 1 ms 200 T J = 125 OC 150 100 10 ms 100 ms 10 T C = 25 O C T J = 25 O C DC 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 1.6 1 V SD - Volts 10 1 00 V DS - Volts Figure 11. Transient Thermal Resistance 0.40 0.35 R(th)JC - K/W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 10 -3 10 -2 10 -1 10 0 10 1 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.