IXFN170N25X3

Advance Technical Information IXFN170N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 G S 250V 146A  7.4m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = miniBLOC, SOT-227 E153432  S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 250 250 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 146 400 A A IA EAS TC = 25C TC = 25C 85 2.3 A J PD TC = 25C 390 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second S D G = Gate S = Source Features     Mounting Torque Terminal Connection Torque Weight D = Drain    International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 85A, Note 1 V 4.5 V 100 nA 10 A 1 mA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings 6.1 7.4 m Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100825A(4/17) IXFN170N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 66 RGi Gate Input Resistance Ciss Coss SOT-227B (IXFN) Outline 110 S 1.3  13.5 nF 2.3 nF 1.6 pF 800 3280 pF pF 18 ns 10 ns 62 ns 7 ns 190 nC 55 nC 45 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 85A RG = 5(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 85A Qgd (M4 screws (4x) supplied) 0.32 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, Pulse Width Limited by TJM 680 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM 135 IF = 85A, -di/dt = 100A/s 980 VR = 100V, VGS = 0V ns  nC 13 A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN170N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 180 800 VGS = 10V 8V 160 VGS = 10V 700 7V 140 600 I D - Amperes I D - Amperes 120 100 6V 80 60 9V 5V 8V 500 400 7V 300 200 40 6V 100 20 4V 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 VDS - Volts 2.8 180 VGS = 10V 8V 30 VGS = 10V 2.4 RDS(on) - Normalized 7V 140 120 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 160 20 VDS - Volts 6V 100 80 5V 60 2.0 I D = 170A 1.6 I D = 85A 1.2 40 0.8 4V 20 0.4 0 0 4.0 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 1.2 VGS = 10V 3.5 BVDSS / VGS(th) - Normalized o TJ = 125 C RDS(on) - Normalized -50 3 3.0 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 BVDSS 0.4 0.5 0 100 200 300 400 500 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 600 700 800 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN170N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 250 160 140 200 100 I D - Amperes I D - Amperes 120 80 60 150 100 o TJ = 125 C o 25 C 40 o - 40 C 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 240 600 o TJ = - 40 C 500 o 160 400 25 C I S - Amperes g f s - Siemens 200 o 120 125 C 80 300 200 o TJ = 25 C 40 o TJ = 125 C 100 0 0 0 40 80 120 160 200 240 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 125V I D = 85A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN170N25X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 24 RDS(on) Limit 25μs 20 16 I D - Amperes E OSS - MicroJoules 100 12 8 100μs 10 1ms 1 o TJ = 150 C 4 10ms o TC = 25 C Single Pulse 0 DC 0.1 0 40 80 120 160 200 240 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_170N25X3(28-S301) 4-24-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.