IXFN170N30P

IXFN170N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 300 300 V V VGSS VGSM Continuous Transient 20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 138 500 A A IA EAS TC = 25C TC = 25C 85 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g VISOL 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Md Mounting Torque Terminal Connection Torque Weight 300V 138A  18m 200ns miniBLOC, SOT-227 B E153432 Symbol TJ = =   S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International Standard Package • miniBLOC, with Aluminium Nitride Isolation • Isolation Voltage 2500 V~ • High Current Handling Capability • Fast Intrinsic Diode • Avalanche Rated • Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 85A, Note 1 TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved • Low Gate Charge Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • High Power Density V 4.5 V 200 nA 25A 1.5 mA 18 m Applications • DC-DC Coverters • Battery Chargers • Switched-Mode and Resonant-Mode Power Supplies • DC Choppers • AC and DC Motor Control • Uninterrupted Power Supplies • High Speed Power Switching Applications DS100001A(9/15) IXFN170N30P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 60A, Note 1 57 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 85A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 85A Qgd SOT-227B (IXFN) Outline 95 S 20 nF 2450 pF 27 pF 41 ns 29 ns 79 ns 16 ns 258 nC 82 nC 78 nC 0.05 C/W (M4 screws (4x) supplied) 0.14C/W RthJC RthCS Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, Pulse Width Limited by TJM 500 A VSD IF = 85A, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 85A, -di/dt = 150A/μs Note 1: Pulse test, t 300s, duty cycle, d 2%. 1.85 21 VR = 100V 200 ns C A IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN170N30P Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 180 300 VGS = 10V 8V 160 VGS = 10V 8V 250 7V 7V 120 I D - Amperes I D - Amperes 140 100 80 6V 60 200 150 6V 100 40 50 5V 5V 20 0 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 5 VDS - Volts 15 20 Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 180 3.2 VGS = 10V 8V 160 140 VGS = 10V 2.8 7V RDS(on) - Normalized I D - Amperes 10 VDS - Volts 120 6V 100 80 60 2.4 I D = 170A 2.0 I D = 85A 1.6 1.2 40 5V 0.8 20 0 0.4 0 1 2 3 4 5 6 7 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 160 VGS = 10V 140 2.4 TJ = 125ºC 120 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.0 1.6 100 80 60 40 TJ = 25ºC 1.2 20 0.8 0 0 50 100 150 200 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN170N30P Fig. 7. Input Admittance 200 160 180 140 160 TJ = - 40ºC 25ºC g f s - Siemens 140 120 I D - Amperes Fig. 8. Transconductance 180 TJ = 125ºC 25ºC - 40ºC 100 80 60 120 125ºC 100 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 20 40 60 80 VGS - Volts 100 120 140 160 180 200 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 350 VDS = 150V 9 300 I D = 85A 8 I G = 10mA 7 VGS - Volts I S - Amperes 250 200 150 5 4 3 TJ = 125ºC 100 6 2 TJ = 25ºC 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 80 VSD - Volts Fig. 11. Capacitance 160 200 240 280 Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 Ciss RDS(on) Limit 25µs 100 10,000 100µs I D - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs Coss 1,000 10 1ms TJ = 150ºC 1 100 Crss TC = 25ºC Single Pulse f = 1 MHz 10ms DC 100ms 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN170N30P Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_170N30P(9S) 9-24-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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