IXFN170N65X2

IXFN170N65X2 X2-Class HiPerFETTM Power MOSFET VDSS ID25 G S 650V 170A  13m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = miniBLOC, SOT-227 E153432  S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 170 340 A A IA EAS TC = 25C TC = 25C 15 5 A J PD TC = 25C 1170 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second S D G = Gate S = Source Features     Mounting Torque Terminal Connection Torque Weight D = Drain    International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified)  Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 650 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings V 5.0 V 200 nA 50 A 5 mA 13 m Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100692A(03/16) IXFN170N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 55 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss SOT-227B (IXFN) Outline 90 S 0.56  27.0 nF 15.8 nF 12.4 pF 780 3400 pF pF 60 ns Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 15 ns 133 ns 6 ns 434 nC 166 nC 137 nC (M4 screws (4x) supplied) 0.107 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 170 A ISM Repetitive, Pulse Width Limited by TJM 680 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM 270 IF = 85A, -di/dt = 100A/s 3.1 VR = 100V, VGS = 0V 22.6 ns  μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN170N65X2 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 300 180 VGS = 10V VGS = 10V 9V 160 9V 250 140 200 I D - Amperes I D - Amperes 8V 8V 120 100 7V 80 150 7V 100 60 6V 40 50 6V 20 5V 5V 0 0 0 0.5 1 1.5 2 0 2.5 5 10 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 85A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 180 3.0 VGS = 10V 9V 160 VGS = 10V 2.6 R DS(on) - Normalized 8V 140 120 I D - Amperes 15 VDS - Volts 100 7V 80 6V 60 2.2 I D = 170A 1.8 I D = 85A 1.4 1.0 40 5V 0.6 20 4V 0.2 0 0 1 2 3 4 -50 5 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 85A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 2.6 150 1.3 VGS = 10V TJ = 125ºC 1.2 BVDSS / VGS(th) - Normalized 2.2 RDS(on) - Normalized -25 VDS - Volts 1.8 1.4 TJ = 25ºC 1.0 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.6 0.5 0 50 100 150 200 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 250 300 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN170N65X2 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 180 200 160 180 160 140 140 I D - Amperes I D - Amperes 120 100 80 60 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 40 40 20 20 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 180 300 TJ = - 40ºC 160 250 25ºC 120 200 I S - Amperes g f s - Siemens 140 125ºC 100 80 60 150 TJ = 125ºC 100 TJ = 25ºC 40 50 20 0 0 0 20 40 60 80 100 120 140 160 180 200 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 1,000,000 VDS = 325V 100,000 Capacitance - PicoFarads I D = 85A 8 VGS - Volts I G = 10mA 6 4 2 Ciss 10,000 Coss 1,000 100 10 C rss f = 1 MHz 0 1 0 50 100 150 200 250 300 350 400 450 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN170N65X2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 180 RDS(on) Limit 160 25µs 100 100µs 120 I D - Amperes EOSS - MicroJoules 140 100 80 10 60 1 40 20 Fig. 15. Maximum Transient 01 TJ = 150ºC 1ms TC = 25ºC Pulse ThermalSingle Impedance 10ms 0.1 0 100 200 300 400 500 10 600 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaa 0.2 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_170N65X2(C9-S602) 12-01-15 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.