IXFN180N15P

PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 150 A ID(RMS) External lead current limit 100 A IDM TC = 25° C, pulse width limited by TJM 380 A IAR TC = 25° C 60 A Maximum Ratings EAR TC = 25° C 100 mJ EAS TC = 25° C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 680 W TJ TJM Tstg Md VISOL TL -55 ... +175 °C 175 °C -55 ... +150 °C 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 2500 V~ 3000 V~ Mounting torque Terminal connection torque (M4) 50/60 Hz t = 1 min IISOL ≤1 mA t=1s 1.6 mm (0.062 in.) from case for 10 s Weight 30 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) VDSS °C 300 VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS, VGS = 0 V RDS(on) VGS = 10 V, ID = 90 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride l l l isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages 150 l V 5.0 V ±100 nA 25 500 µA µA 11 mΩ D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Characteristic Values Min. Typ. Max. 2.5 TJ = 150° C = 150 V = 150 A ≤ 11 mΩ Ω ≤ 200 ns l l Easy to mount Space savings High power density DS99241E(01/06) IXFN 180N15P Symbol gfs Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. VDS= 10 V; ID = 90 A, pulse test 55 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 86 S 7000 pF 2250 pF 515 pF td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 90 A td(off) RG = 3.3 Ω (External) 30 ns 32 ns 150 ns 36 ns 240 nC 55 nC 140 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 90 A Qgd SOT-227B Outline 0.22° CW RthJC RthCS ° C/W 0.05 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive 380 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = 25 A -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 0.6 6 200 ns µC Α IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFN 180N15P Fig. 1. Output Characte r is tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 320 180 V GS = 10V 160 140 9V 240 120 8V I D - Amperes I D - Amperes V GS = 10V 280 9V 100 80 7V 60 200 8V 160 120 7V 80 40 6 20 40 0 0 0.4 0.8 1.2 1.6 6V 0 2 0 V D S - V olts Fig. 3. Output Characte r is tics @ 150ºC 180 3 4 5 6 7 V D S - V olts 8 9 10 2.8 2.6 V GS = 10V 2.4 R D S ( o n ) - Normalized 140 I D - Amperes 2 Fig. 4. RDS(on ) Norm alize d to ID = 90A V alue vs . Junction Te m pe r atur e V GS = 10V 9V 160 1 8 120 100 80 7V 60 6V 40 20 2.2 2 I D = 180A 1.8 1.6 I D = 90A 1.4 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 V D S - V olts -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alize d to ID = 90A V alue vs . Dr ain Cur re nt Fig. 6. Drain Current vs. Case Tem perature 3.4 120 External Lead Current Limit TJ = 175 ºC 2.8 100 2.5 I D - Amperes R D S ( o n ) - Normalized 3.1 2.2 V GS = 10V 1.9 V GS = 15V 1.6 80 60 40 TJ = 25 ºC 1.3 20 1 0.7 0 0 50 100 150 200 I D - A mperes © 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 150 175 TC - Degrees Centigrade IXFN 180N15P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 120 250 TJ = -40 ºC 225 100 200 - Siemens 150 125 fs 100 TJ = 150 ºC 75 g I D - Amperes 175 25 ºC 50 80 60 40 20 -40 ºC 25 25 ºC 150 ºC 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 25 50 75 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage Fig. 10. Gate Char ge 10 350 9 300 I D = 90A I G = 10m A 7 V G S - Volts I S - Amperes V DS = 75V 8 250 200 150 TJ = 150 ºC 100 6 5 4 3 2 TJ = 25 ºC 50 1 0 0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 V S D - V olts 25 50 75 100 125 150 175 200 225 250 Q G - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forw ard-Bias Safe Operating Area 100,000 1000 f = 1M Hz R DS(on) Limit Cis 10,000 I D - Amperes Capacitance - picoFarads 100 125 150 175 200 225 250 I D - A mperes Cos 1,000 25µs 100µs 100 1ms Crs 10ms TJ = 175ºC TC = 25ºC 100 DC 10 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - Volts 1000 IXFN 180N15P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_180N15P (88) 03-23-06-C.xls Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.