IXFN180N20

IXFN180N20 HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   200V 180A  12.5m 250ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 180 A IDM TC = 25C, Pulse Width Limited by TJM 720 A IA EAS TC = 25C TC = 25C 36 4 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 700 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 200 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 90A, Note 1 TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved Applications V 4.0 Easy to Mount Space Savings   V  200 nA  100 A 2 mA  DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Choppers Temperature and Lighting Controls 12.5 m DS98551C(6/15) IXFN180N20 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 90 VDS = 15V, ID = 60A, Note 1 130 S 22 nF 3800 pF 600 pF 55 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 90A RG = 1 (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 90A Qgd 85 ns 180 ns 56 ns 660 nC 120 nC 270 nC (M4 screws (4x) supplied) 0.18C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 180 A ISM Repetitive, Pulse Width Limited by TJM 720 A VSD IF = 100A, VGS = 0V, Note 1 1.2 V trr QRM IRM IF = 50A, -di/dt = 100A/s Note 1.5 10 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.