Preliminary Technical Information
IXFN180N25T
GigaMOSTM
Power MOSFET
VDSS
ID25
=
=
250V
168A
12.9m
200ns
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
250
V
VDGR
TJ = 25C to 150C, RGS = 1M
250
V
G
VGSS
Continuous
20
V
VGSM
Transient
30
V
ID25
TC = 25C
168
A
IDM
TC = 25C, Pulse Width Limited by TJM
500
A
IA
EAS
TC = 25C
TC = 25C
90
5
A
J
dv/dt
IS IDM, VDD VDSS, TJ 150°C
20
V/ns
PD
TC = 25C
900
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
VISOL
50/60 Hz, RMS
IISOL 1mA
Md
Mounting Torque
Terminal Connection Torque
t = 1 minute
t = 1 second
Weight
S
D
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
250
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 90A, Note 1
V
5.0
V
TJ = 125C
nA
50 A
2.5 mA
12.9 m
© 2014 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
Applications
200
D = Drain
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100130A(9/14)
IXFN180N25T
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
90
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
150
S
23.8
nF
2070
pF
47
pF
1.1
35
ns
52
ns
88
ns
20
ns
364
nC
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
VGS = 15V, VDS = 0.5 • VDSS, ID = 90A
RG = 1 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A
SOT-227B (IXFN) Outline
137
nC
60
nC
Qgd
RthJC
0.138C/W
RthCS
0.05C/W
(M4 screws (4x) supplied)
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
180
A
ISM
Repetitive, Pulse Width Limited by TJM
720
A
VSD
IF = 100A, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 90A, -di/dt = 100A/s
VR = 75V, VGS = 0V
0.77
200
ns
C
11
A
Note 1: Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN180N25T
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
350
180
VGS = 10V
8V
160
VGS = 10V
8V
300
7V
140
7V
250
I D - Amperes
I D - Amperes
120
100
80
6V
200
150
60
6V
100
40
50
20
5V
5V
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2.2
4
6
8
10
12
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
Fig. 4. RDS(on) Normalized to ID = 90A Value vs.
Junction Temperature
180
2.6
VGS = 10V
8V
7V
160
2.4
VGS = 10V
2.2
120
RDS(on) - Normalized
140
I D - Amperes
2
VDS - Volts
6V
100
80
60
2.0
1.8
I D = 180A
1.6
I D = 90A
1.4
1.2
1.0
40
5V
0.8
20
0.6
4V
0.4
0
0
2.4
0.4
0.8
1.2
1.6
2
2.4
3.2
3.6
-50
4
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 90A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
180
125
150
125
150
160
VGS = 10V
2.2
140
TJ = 125ºC
2.0
120
1.8
I D - Amperes
RDS(on) - Normalized
2.8
1.6
1.4
100
80
60
TJ = 25ºC
1.2
40
1.0
20
0.8
0
0
50
100
150
200
I D - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
250
300
350
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFN180N25T
Fig. 7. Input Admittance
Fig. 8. Transconductance
280
200
TJ = - 40ºC
180
240
160
200
g f s - Siemens
I D - Amperes
140
120
100
TJ = 125ºC
80
25ºC
25ºC
160
125ºC
120
- 40ºC
60
80
40
40
20
0
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
0
6.6
20
40
60
VGS - Volts
100
120
140
160
180
200
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
10
300
VDS = 125V
9
250
I D = 90A
8
I G = 10mA
7
VGS - Volts
200
I S - Amperes
80
I D - Amperes
150
TJ = 125ºC
100
6
5
4
3
TJ = 25ºC
2
50
1
0
0
0
0.2
0.4
0.6
0.8
1
1.2
0
1.4
50
100
200
250
300
350
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
100,000
1,000
f = 1 MHz
RDS(on) Limit
Ciss
25µs
- Amperes
10,000
C oss
100µs
D
1,000
100
I
Capacitance - PicoFarads
150
QG - NanoCoulombs
VSD - Volts
10
100
TJ = 150ºC
1ms
TC = 25ºC
Single Pulse
Crss
10
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1000
IXFN180N25T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
80
80
RG =1Ω , VGS = 15V
70
t r - Nanoseconds
60
t r - Nanoseconds
RG = 1Ω , VGS = 15V
70
VDS = 125V
50
I D = 90A
40
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
30
I D = 180A
VDS = 125V
60
TJ = 125ºC
50
40
TJ = 25ºC
30
20
20
10
0
10
25
35
45
55
65
75
85
95
105
115
125
90
100
110
120
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
tr
240
160
170
80
I D = 180A
120
60
I D = 90A
40
120
td(off) - - - 110
VDS = 125V
I D = 180A
22
100
18
90
I D = 90A
14
40
80
20
0
10
0
1
2
3
4
5
6
7
8
9
25
10
35
45
55
RG - Ohms
tf
24
130
700
120
600
td(off) - - - -
RG = 1Ω, VGS = 15V
100
TJ = 25ºC
18
90
16
80
14
120
130
140
150
I D - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
160
170
70
180
t f - Nanoseconds
TJ = 125ºC
20
110
85
95
105
115
70
125
tf
560
td(off) - - - -
480
TJ = 125ºC, VGS = 15V
VDS = 125V
500
400
400
320
I D = 180A
300
240
I D = 90A
200
160
100
80
0
0
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d ( o f f ) - Nanoseconds
110
t d ( o f f ) - Nanoseconds
22
100
75
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
VDS = 125V
90
65
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
26
t f - Nanoseconds
180
t d ( o f f ) - Nanoseconds
100
80
150
RG = 1Ω, VGS = 15V
26
VDS = 125V
160
tf
120
t d ( o n ) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGS = 15V
200
140
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
30
140
t f - Nanoseconds
280
130
I D - Amperes
IXFN180N25T
Fig. 19. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_180N25T (9E-N25) 9-18-14-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.