IXFN200N07

HiPerFETTM Power MOSFETs IXFN 200 N06 IXFN 200 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IL(RMS) TC= 25°C; Chip capability Terminal current limit IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TJ TJM Tstg VISOL Md r o F t o N n g i s e D N07 N06 200N06/200N07 w e N t = 1 min t=1s V V ±20 ±30 V V 200 100 A A 600 100 A A 30 2 mJ J V/ns 520 W -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ - Mounting torque Terminal connection torque 70 60 5 TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA ID25 60 V 70 V 200 A 200 A RDS(on) 6 6 mΩ Ω Ω mΩ trr ≤ 250 ns Test Conditions VDSS VDGR VDSS - 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features z z z z z z z International standard packages miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Applications z Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS (th) VDS = VGS, ID = 8 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V TJ = 125°C RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 TJ = 25°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved 60 70 2 2 4 V V V ±200 nA 400 mA µA 6 mΩ z z z z z z DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays Advantages z z z Easy to mount Space savings High power density DS97533B(02/03) IXFN 200N06 IXFN 200N07 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 60 80 S 9000 pF 4000 pF Crss 2400 pF td(on) 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), 60 ns 100 ns 60 ns 480 nC 60 nC 240 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode 0.24 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive; pulse width limited by TJM 600 A VSD IF = 100 A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.7 V 250 ns trr QRM IRM 150 IF = 25 A -di/dt = 100 A/µs, VR = 50 V 0.7 µC 9 A miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.