IXFN200N10P

IXFN200N10P PolarTM HiPERFET Power MOSFET VDSS ID25 RDS(on) = 100V = 200A  < 7.5m N-Channel Enhancement Mode Avalanche Rated S miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 100 V VDGR TJ = 25C to 175C, RGS = 1M 100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 200 400 A A IA EAS TC = 25C TC = 25C 60 4 A J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 680 W G -55...+175  C TJM 175  C Tstg -55...+175  C TJ VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g Weight S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package miniBLOC, with Aluminium Nitride Isolation Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 100 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 VGS = 15V, ID = 400A, Note 1 V 5.0 V 100 nA 25  A 500 A TJ = 150C © 2017 IXYS CORPORATION, All Rights Reserved  5.5 7.5 m m High Power Density Easy to Mount Space Savings Applications • DC-DC Coverters • Battery Chargers • Switch-Mode and Resonant-Mode Power Supplies • DC Choppers • AC and DC Motor Drives • Uninterrupted Power Supplies • High Speed Power Switching Applications DS99239F(02/17) IXFN200N10P Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 60 VDS = 10V, ID = 60A, Note 1 97 Ciss Coss Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 60A RG = 3.3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd pF 2900 pF 860 pF 30 ns 35 ns 150 ns 90 ns 235 nC 50 nC 135 nC RthJC M4-7 NUT (4 PLACES) J K S 7600 VGS = 0V, VDS = 25V, f = 1MHz TO-227 Outline B A D T c VMWN S E F G H P NUT MATERIAL: STANDARD - Low carbon steel with Ni plating. OPTIONAL - Brass Nut is available PART NUMBER-BN Q O R U 0.22 C/W RthCS 0.05      C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 200 A ISM Repetitive, pulse width limited by TJM 400 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 25A, -di/dt = 100A/s, VR = 50V, VGS = 0V Note: 6.0 0.4 150 ns A μC 1. Pulse test, t  300s; duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN200N10P Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 200 350 VGS = 10V 180 VGS = 10V 9V 300 160 250 I D - Amperes I D - Amperes 9V 8V 140 120 100 80 7V 60 200 8V 150 100 7V 40 6V 50 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature 2.4 200 VGS = 10V 9V 180 2.0 R DS(on) - Normalized 8V 140 120 100 5 VGS = 10V 2.2 160 I D - Amperes 6V 0 0 7V 80 60 I D = 200A 1.8 I D = 100A 1.6 1.4 1.2 1.0 40 6V 0.8 20 0 5V 0 1 1 2 2 3 0.6 3 4 -50 -25 0 VDS - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 220 2.4 200 2.2 180 TJ = 150ºC 160 1.8 I D - Amperes RDS(on) - Normalized 2.0 1.6 VGS = 10V 1.4 VGS = 15V 1.2 140 120 100 80 60 TJ = 25ºC 1.0 40 0.8 20 0.6 0 0 50 100 150 200 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN200N10P Fig. 7. Input Admittance Fig. 8. Transconductance 300 140 TJ = - 40ºC 120 250 100 g f s - Siemens I D - Amperes 200 150 100 TJ = 125ºC 25ºC 25ºC 80 125ºC 60 40 50 20 - 40ºC 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 50 100 150 VGS - Volts 200 250 300 350 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 350 VDS = 50V 9 300 I D = 100A 8 TJ = 25ºC 250 I G = 10mA 7 V GS - Volts I S - Amperes TJ = 125ºC 200 150 6 5 4 3 100 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0 40 VSD - Volts 80 120 160 200 240 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 RDS(on) Limit 100µs Ciss 10,000 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 100 1ms 1,000 10ms TJ = 175ºC Crss TC = 25ºC Single Pulse 100 DC 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFN200N10P Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13 Maximum Transient Thermal Impedance 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: T_200N10P (88) 2-08-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.