IXFN20N120P

IXFN20N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 20 A IDM TC = 25°C, pulse width limited by TJM 50 A IA TC = 25°C 10 A EAS TC = 25°C 1 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 595 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1min t = 1s Mounting torque Terminal connection torque °C 300 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g Weight 1200V 20A Ω 570mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol TL = = ≤ ≤ S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. Applications: BVDSS VGS = 0V, ID = 1mA 1200 z VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 10A, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 6.5 V ± 200 nA 25 μA 5 mA 570 mΩ z z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99889A (04/08) IXFN20N120P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 10 VDS = 20V, ID = 10A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss SOT-227B Outline 16 S 11.1 nF 600 pF 60 pF 1.60 Ω RGi Gate input resistance td(on) Resistive Switching Times 49 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 45 ns td(off) RG = 1Ω (External) 72 ns 70 ns 193 nC 74 nC 85 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A Qgd RthJC 0.21 RthCS 0.05 Source-Drain Diode TJ = 25°C unless otherwise specified) °C/W °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, pulse width limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM 300 ns IF = 10A, -di/dt = 100A/μs VR = 100V 0.84 μC 9 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN20N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 20 VGS = 10V 9V 18 VGS = 10V 9V 35 16 30 8V 12 ID - Amperes ID - Amperes 14 10 8 25 20 8V 15 6 10 4 7V 2 7V 5 0 0 0 2 4 6 8 10 0 12 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 2.6 20 VGS = 10V 8V 18 VGS = 10V 2.4 2.2 RDS(on) - Normalized 16 14 ID - Amperes 20 VDS - Volts VDS - Volts 12 10 7V 8 6 4 2.0 I D = 20A 1.8 I D = 10A 1.6 1.4 1.2 1.0 0.8 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 22 VGS = 10V 20 TJ = 125ºC 2.2 16 1.8 ID - Amperes RDS(on) - Normalized 18 2.0 1.6 1.4 14 12 10 8 6 1.2 TJ = 25ºC 4 1.0 2 0.8 0 0 5 10 15 20 25 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN20N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 35 30 30 25 25 g f s - Siemens ID - Amperes TJ = - 40ºC 20 TJ = 125ºC 25ºC - 40ºC 15 25ºC 20 125ºC 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 240 280 16 VDS = 600V 14 I D = 10A 50 I G = 10mA 12 40 VGS - Volts IS - Amperes 20 Fig. 10. Gate Charge 60 30 10 8 6 TJ = 125ºC 20 4 TJ = 25ºC 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 40 VSD - Volts 80 120 160 200 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz Ciss 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads 15 ID - Amperes VGS - Volts Coss 1,000 100 0.100 0.010 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N120P(86) 04-03-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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