IXFN210N30P3

Polar3TM HiPerFETTM Power MOSFET IXFN210N30P3 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 192 A IDM TC = 25C, Pulse Width Limited by TJM 550 A IA EAS TC = 25C TC = 25C 105 4 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 1500 W -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque 300V 192A 14.5m 250ns miniBLOC E153432 Symbol TJ TJM Tstg = =   Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features         International Standard Package miniBLOC, with Aluminium Nitride Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 300 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 105A, Note 1 V 5.0 V 200 nA Note 2, TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved 50 A 1.5 mA Applications      14.5 m Easy to Mount Space Savings  DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100482B(1/20) IXFN210N30P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 60 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 100 S 16.2 nF 2550 pF 42 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 1.0 Qgs  46 ns 25 ns 94 ns 13 ns 268 nC 80 nC 72 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 105A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 105A Qgd RthJC 0.083C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 210 A ISM Repetitive, Pulse Width Limited by TJM 840 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr QRM IRM Notes: IF = 105A, -di/dt = 100A/s 4.1 28 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Part must be heatsunk for high-temp IDSS measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN210N30P3 Fig. 1. Output Characteristics @ TJ = 25ºC VGS = 10V 8V 200 300 VGS = 10V 8V 250 160 7V 7V I D - Amperes I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 120 80 6V 200 150 6V 100 40 50 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 10 15 20 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 105A Value vs. Junction Temperature 3.0 VGS = 10V 8V 7V 200 VGS = 10V 2.6 RDS(on) - Normalized 160 I D - Amperes 5 VDS - Volts 6V 120 80 5V 2.2 I D = 210A 1.8 I D = 105A 1.4 1.0 40 0.6 4V 0 0 2.6 2.4 1 2 3 4 5 6 0.2 7 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 105A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 200 125 150 125 150 180 VGS = 10V TJ = 125ºC 160 2.2 140 2.0 I D - Amperes RDS(on) - Normalized -25 VDS - Volts 1.8 1.6 1.4 120 100 80 60 TJ = 25ºC 1.2 40 1.0 20 0.8 0 0 50 100 150 200 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN210N30P3 Fig. 8. Transconductance Fig. 7. Input Admittance 200 200 TJ = - 40ºC 180 160 160 25ºC g f s - Siemens I D - Amperes 140 120 100 80 TJ = 125ºC 25ºC 60 120 125ºC 80 - 40ºC 40 40 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 300 VDS = 150V 9 250 I D = 105A 8 I G = 10mA 7 V GS - Volts 200 I S - Amperes 100 I D - Amperes 150 6 5 4 TJ = 125ºC 100 3 TJ = 25ºC 50 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 30 60 90 VSD - Volts Fig. 11. Capacitance 150 180 210 240 270 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Ciss 25µs 10,000 100 100µs I D - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs Coss 1,000 100 10 1ms 10ms 1 TJ = 150ºC 100ms DC TC = 25ºC Single Pulse Crss 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN210N30P3 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 © 2020 IXYS CORPORATION, All Rights Reserved 0.01 Pulse Width - Seconds 0.1 1 10 IXYS REF: F_210N30P3(K9) 6-22-12 IXFN210N30P3 SOT-227 Outline J M4-7 NUT (4 PLACES) A B D M N C S L E F G H 0 U IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN210N30P3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved