IXFN21N100Q

IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS(on) = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 21 A IDM TC = 25°C, pulse width limited by TJM 84 A IAR TC = 25°C 21 A EAR TC = 25°C 60 mJ 2.5 J 10 V/ns EAS dv/dt PD IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 520 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 2500 3000 V~ V~ 1.5/13 1.5/13 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque Weight S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features •IXYS advanced low Qg process •Low gate charge and capacitances - easier to drive -faster switching •Unclamped Inductive Switching (UIS) rated •Low RDS (on) •Fast intrinsic diode •International standard package •miniBLOC with Aluminium nitride isolation for low thermal resistance •Low terminal inductance (