IXFN220N20X3

IXFN220N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 G S 200V 160A  6.2m RDS(on)  D N-Channel Enhancement Mode Avalanche Rated = = miniBLOC, SOT-227 E153432  S S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 200 200 V V VGSS VGSM Continuous Transient  20  30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 160 500 A A IA EAS TC = 25C TC = 25C 110 2.5 A J PD TC = 25C 390 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL  1mA t = 1 minute t = 1 second S D G = Gate S = Source Features     Mounting Torque Terminal Connection Torque Weight D = Drain   International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Avalanche Rated Low RDS(on) Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 110A, Note 1 V Applications 4.5 V  100 nA 10 A 1 mA TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings 5.2 Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls 6.2 m DS100828C(11/19) IXFN220N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 70 RGi Gate Input Resistance Ciss Coss 120 S 1.6  13.6 nF 2.2 nF 9.0 pF 1000 3250 pF pF 37 ns VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 85A RG = 5(External) Qg(on) Qgs 27 ns 155 ns 17 ns 204 nC 65 nC 47 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 85A Qgd 0.32 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 220 A ISM Repetitive, Pulse Width Limited by TJM 880 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM 128 IF = 110A, -di/dt = 100A/s 580 VR = 100V, VGS = 0V 9 ns  nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN220N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 220 900 VGS = 10V VGS = 10V 8V 200 800 180 600 140 I D - Amperes I D - Amperes 9V 700 7V 160 120 100 6V 80 8V 500 400 7V 300 60 200 40 5V 20 6V 100 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 15 VDS - Volts 220 2.8 VGS = 10V 8V 2.4 140 RDS(on) - Normalized 160 I D - Amperes 30 VGS = 10V 7V 180 6V 120 100 80 60 2.0 I D = 220A 1.6 I D = 110A 1.2 5V 40 0.8 20 4V 0.4 0 0 4.0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 3.5 RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 200 20 VDS - Volts o 3.0 TJ = 125 C 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 0.5 0.5 0 100 200 300 400 500 600 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 700 800 900 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFN220N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 350 180 160 300 140 250 I D - Amperes I D - Amperes 120 100 80 60 200 150 o TJ = 125 C o 100 25 C o - 40 C 40 50 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 6.0 6.5 7.0 7.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 320 5.5 VGS - Volts 600 o TJ = - 40 C 280 500 240 400 I S - Amperes g f s - Siemens o 25 C 200 o 160 125 C 120 300 200 o TJ = 125 C 80 100 40 0 o TJ = 25 C 0 0 40 80 120 160 200 240 280 320 360 400 0.2 440 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V Capacitance - PicoFarads I D = 110A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 10,000 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 140 160 180 200 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFN220N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 18 1000 RDS(on) Limit 16 25μs 100 100μs 12 I D - Amperes E OSS - MicroJoules 14 10 8 6 10 1ms 1 4 o TJ = 150 C 10ms o TC = 25 C Single Pulse 2 0 DC 0.1 0 40 80 120 160 200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_220N20X3(28-S202) 4-26-17 IXFN220N20X3 SOT-227 Outline IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN220N20X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved