IXFN240N15T2

Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (Chip Capability) 240 A IL(RMS) IDM External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 200 600 A A IA EAS TC = 25°C TC = 25°C 120 2 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns PD TC = 25°C 830 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 150 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved 5.0 V ±200 nA 25 μA 3 mA 4.1 G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications V TJ = 150°C S D 5.2 mΩ Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100192(09/09) IXFN240N15T2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 125 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 210 S 32 nF 2280 pF 270 pF 1.50 Ω 48 ns 125 ns 77 ns 145 ns 460 nC 125 nC 130 nC RthJC 0.18 RthCS SOT-227B (IXFN) Outline (M4 screws (4x) supplied) °C/W °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 240 A ISM Repetitive, Pulse Width Limited by TJM 960 A VSD IF = 100A, VGS = 0V, Note 1 1.2 V trr QRM IRM 140 IF = 120A, -di/dt = 100A/μs VR = 75V, VGS = 0V ns 410 nC 8.2 A Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN240N15T2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 400 240 VGS = 15V 10V 8V 7V 200 300 ID - Amperes 160 ID - Amperes VGS = 10V 8V 7V 350 6V 120 80 250 6V 200 5.5V 150 5.5V 100 40 5V 5V 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 VDS - Volts Fig. 3. Output Characteristics 6 7 8 9 10 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature @ T J = 150ºC 240 3.0 VGS = 15V 10V 8V 7V VGS = 10V 2.6 160 R DS(on) - Normalized 200 ID - Amperes 5 VDS - Volts 6V 120 5V 80 40 I D = 240A 2.2 I D = 120A 1.8 1.4 1.0 0.6 4V 0 0.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 220 3.4 200 VGS = 10V 3.0 External Lead Current Limit 180 160 TJ = 175ºC 2.6 ID - Amperes R DS(on) - Normalized 25 2.2 1.8 1.4 140 120 100 80 60 TJ = 25ºC 40 1.0 20 0.6 0 0 40 80 120 160 200 240 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 280 320 360 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN240N15T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 400 TJ = - 40ºC 180 350 160 300 g f s - Siemens ID - Amperes 140 120 100 TJ = 150ºC 80 25ºC 25ºC 250 150ºC 200 150 - 40ºC 60 100 40 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 400 450 500 Fig. 10. Gate Charge 10 320 VDS = 75V 9 280 I D = 120A 8 240 I G = 10mA 7 200 VGS - Volts IS - Amperes 100 ID - Amperes 160 120 TJ = 150ºC 6 5 4 3 80 TJ = 25ºC 2 40 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 50 100 150 200 250 300 350 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000.0 100.0 RDS(on) Limit f = 1 MHz 100.0 100µs External Lead Limit 10.0 ID - Amperes Capacitance - NanoFarads 25µs Ciss Coss 1.0 10.0 1ms 10ms 1.0 100ms TJ = 175ºC DC TC = 25ºC Single Pulse Crss 0.1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_240N15T2 (8V)9-14-09 IXFN240N15T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 320 380 RG = 1Ω , VGS = 10V 340 VDS = 75V 240 300 I 260 D = 240A t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGS = 10V 280 VDS = 75V 220 180 I 140 D = 120A 200 TJ = 125ºC 160 120 TJ = 25ºC 80 40 100 0 60 25 35 45 55 65 75 85 95 105 115 60 125 80 100 120 140 TJ - Degrees Centigrade 700 180 300 90 200 60 100 30 0 3 4 5 6 7 8 9 100 300 90 I D = 240A 200 80 I D = 120A 70 0 25 10 35 45 55 65 75 85 95 105 115 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance tf td(off) - - - - 110 200 100 150 90 100 80 TJ = 25ºC 50 120 500 400 I D = 240A 400 I D = 120A 300 300 200 200 100 70 0 100 500 VDS = 75V t f - Nanoseconds TJ = 125ºC td(off) - - - - TJ = 125ºC, VGS = 10V 120 250 80 600 140 160 180 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 200 220 60 240 100 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 75V 600 tf 130 RG = 1Ω, VGS = 10V 60 125 700 140 t d(off) - Nanoseconds t f - Nanoseconds 400 RG - Ohms 400 60 110 100 0 300 RG = 1Ω, VGS = 10V 500 t f - Nanoseconds 120 I D = 120A I D = 240A 350 td(off) - - - - t d(off) - Nanoseconds 150 400 2 240 VDS = 75V VDS = 75V 1 220 120 tf t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 500 200 600 210 600 180 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 160 ID - Amperes IXFN240N15T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_240N15T2 (8V)9-14-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.