IXFN26N100P

IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 23 A IDM TC = 25°C, pulse width limited by TJM 65 A IAR TC = 25°C 13 A EAS TC = 25°C 1.0 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 595 W Maximum Ratings -55 ... +150 °C Features 150 °C z TJ TJM Tstg TL 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns G S D G = Gate S = Source z °C 300 °C z 2500 3000 V~ V~ z 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. z 30 g Weight D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. -55 ... +150 t = 1min t = 1s Mounting torque Terminal connection torque S z International standard package Encapsulating epoxy meets UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 13A, Note 1 ©2008 IXYS CORPORATION, All rights reserved TJ = 125°C z z Easy to mount Space savings High power density V Applications 6.5 V z ± 200 nA z 25 μA 2.0 mA z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls 390 mΩ DS99878A(4/08) IXFN26N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 13A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss SOT-227B Outline 22 S 11.9 nF 690 pF 60 pF 1.50 Ω RGi Gate input resistance td(on) Resistive Switching Times 45 ns tr VGS = 10V, VDS = 0.5 • VDSS, ID = 13A 45 ns td(off) RG = 1Ω (External) 72 ns 50 ns 197 nC 76 nC 85 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 13A Qgd RthJC 0.21 RthCS 0.05 Source-Drain Diode TJ = 25°C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM °C/W °C/W Characteristic Values Min. Typ. Max. 26 A Repetitive, pulse width limited by TJM 104 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 13A, -di/dt = 100A/μs VR = 100V 1.2 μC 12 A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN26N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 28 70 VGS = 10V 9V 24 60 50 ID - Amperes ID - Amperes 20 VGS = 10V 16 8V 12 8 9V 40 30 20 4 8V 10 7V 7V 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Normalized to I D = 13A Value vs. Junction Temperature 28 3.0 VGS = 10V 9V 24 2.8 VGS = 10V 2.6 RDS(on) - Normalized 2.4 ID - Amperes 20 16 12 8V 8 2.2 I D = 26A 2.0 1.8 I D = 13A 1.6 1.4 1.2 1.0 0.8 4 7V 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.8 24 VGS = 10V 2.6 TJ = 125ºC 22 20 2.4 18 2.2 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 16 14 12 10 8 1.4 6 1.2 TJ = 25ºC 4 1.0 2 0.8 0 0 5 10 15 20 25 30 35 40 ID - Amperes ©2008 IXYS CORPORATION, All rights reserved 45 50 55 60 65 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN26N100P Fig. 8. Transconductance Fig. 7. Input Admittance 50 40 45 35 40 25 g f s - Siemens ID - Amperes 30 TJ = 125ºC 25ºC - 40ºC 20 15 35 TJ = - 40ºC 25ºC 125ºC 30 25 20 15 10 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 VGS - Volts 25 30 35 40 Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 TJ = 125ºC 30 20 ID - Amperes VDS = 500V I D = 13A I G = 10mA 8 6 TJ = 25ºC 20 4 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 40 VSD - Volts 80 120 160 200 240 280 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 1,000 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_26N100P(86)3-28-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.