IXFN26N120P

IXFN26N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 23A Ω 500mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 23 60 A A G = Gate S = Source IA EAS TC = 25°C TC = 25°C 13 1.5 A J PD TC = 25°C 695 W Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns -55 ... +150 150 -55 ... +150 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight S D D = Drain Features International Standard Package Low Intrinsic Gate Resistance z miniBLOC with Aluminum Nitride Isolation z Fast Intrinsic Diode z Dynamic dv/dt Rating z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance z z Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) z Characteristic Values Min. Typ. Max. TJ = 125°C VGS = 10V, ID = 13A, Note 1 z z V 6.5 V ± 200 nA 50 μA 5 mA 500 mΩ Applications z z z z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Discharger Circuits in Lesers Pulsers, Spark Igniters, RF Generators High Voltage Pulse Power Supplies AC and DC Motor Drives High Speed Power Switching Application DS99887B10/11) IXFN26N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 13A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Gate Input Resistance td(on) Resistive Switching Times tr td(off) 14 nF pF pF 1.5 Ω 56 ns 55 ns 76 ns 58 ns 255 nC 87 nC 98 nC tf Qgs S 50 VGS = 10V, VDS = 0.5 • VDSS, ID = 13A RG = 1Ω (External) Qg(on) 21 725 Crss RGi SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 13A Qgd (M4 screws (4x) supplied) 0.18 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM 26 A 104 A 1.5 V 300 IF = 13A, -di/dt = 100A/μs VR = 100V, VGS = 0V ns 1.3 μC 12.0 A Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN26N120P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 50 VGS = 10V 9V 24 VGS = 10V 45 40 20 9V ID - Amperes ID - Amperes 35 16 8V 12 8 30 25 20 8V 15 10 4 7V 5 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.0 VGS = 10V 9V 24 VGS = 10V 2.6 R DS(on) - Normalized 20 ID - Amperes 8V 16 12 7V 8 I D = 26A 2.2 1.8 I D = 13A 1.4 1.0 4 0.6 6V 0 0.2 0 5 10 15 20 25 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current 24 2.4 VGS = 10V 2.2 TJ = 125ºC 20 16 ID - Amperes R DS(on) - Normalized 2.0 1.8 1.6 1.4 12 8 TJ = 25ºC 1.2 4 1.0 0 0.8 0 5 10 15 20 25 30 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 35 40 45 50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN26N120P Fig. 8. Transconductance Fig. 7. Input Admittance 40 30 TJ = - 40ºC 35 25 30 g f s - Siemens ID - Amperes 20 15 TJ = 125ºC 25ºC - 40ºC 10 25ºC 25 125ºC 20 15 10 5 5 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes 20 ID - Amperes 40 VDS = 600V I D = 13A I G = 10mA 8 30 6 TJ = 125ºC 20 4 TJ = 25ºC 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 120 VSD - Volts 160 200 240 280 320 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 100000 10000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1000 Coss 0.1 0.01 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_26N120P (96)10-24-11-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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