IXFN26N90

HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID (cont) RDS(on) trr 900 V 900 V 26 A 25 A 0.30 W 0.33 W 250 ns 250 ns D G Preliminary data sheet Symbol Test Conditions S S Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 26 25 104 100 26 25 A 26N90 25N90 26N90 25N90 26N90 25N90 miniBLOC, SOT-227 B (IXFN) E153432 S G S D IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C EAR TC = 25°C 64 mJ EAS TC = 25°C 3 J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 600 W Features -55 ... +150 °C TJM 150 °C • International standard package • miniBLOC, with Aluminium nitride Tstg -55 ... +150 °C - °C 2500 3000 V~ V~ TJ TJ 1.6 mm (0.63 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL£ 1 mA Md t = 1 min t=1s Mounting torque Terminal connection torque A 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol A 30 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 900 VGH(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS VGS = 0.8 • VDSS =0V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C 26N90 25N90 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved g V 5.0 V ±200 nA 100 2 mA mA 0.30 0.33 W W G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 97526E (10/99) 1-4 IXFN 25N90 IXFN 26N90 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C 0 iss Coss Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 18 8.7 VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External) tf Qg(on) Qgs 28 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd S 10.8 nF 800 1000 pF 300 pF 375 60 ns 35 ns M4 screws (4x) supplied 130 ns Dim. 24 ns 240 31.88 8.20 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 56 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 107 nC G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 0.21 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 26N90 25N90 26 25 A ISM Repetitive; pulse width limited by TJM 26N90 25N90 104 100 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V t rr QRM IRM IF = IS, -di/dt = 100 A/ms, VR = 100 V 250 ns mC A © 2000 IXYS All rights reserved Inches Min. Max. 31.50 7.80 0.05 Source-Drain Diode Millimeter Min. Max. A B RthJC RthCK miniBLOC, SOT-227 B 1.4 10 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFN 25N90 IXFN 26N90 Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 50 20 TJ = 25°C VGS = 9V 8V 40 7V 6V ID - Amperes ID - Amperes 15 TJ = 25°C 5V 10 VGS = 9V 8V 7V 6V 30 20 5V 5 10 4V 0 4V 0 0 2 4 6 8 10 0 4 8 30 30 VGS = 9V 8V 7V 25 6V 5V 20 ID - Amperes TJ = 125°C 25 ID - Amperes 20 Figure 4. Admittance Curves Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 15 10 5 5 10 15 20 TJ = 125OC 15 TJ = 25OC 10 5 4V 0 20 0 25 2 3 VDS - Volts 4 5 6 7 VGS - Volts Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.4 VGS = 10V 2.2 RDS(ON) - Normalized 2.2 RDS(ON) - Normalized 16 VCE - Volts VDS - Volts 0 12 2.0 TJ = 125°C 1.8 1.6 1.4 TJ = 25°C 1.2 2.0 1.6 1.4 0.8 0.8 25 20 30 ID - Amperes © 2000 IXYS All rights reserved 40 50 ID = 13A 1.2 1.0 10 ID = 26A 1.8 1.0 0 VGS = 10V 50 75 100 125 150 TJ - Degrees C 3-4 IXFN 25N90 IXFN 26N90 Figure 7. Gate Charge Figure 8. Capacitance Curves 20000 15 VDS = 500 V ID = 13 A IG = 10 mA Capacitance - pF VGS - Volts 12 Ciss 10000 9 6 f = 1MHz Coss 1000 3 0 Crss 100 0 50 100 150 200 250 300 350 0 5 10 20 25 30 35 40 VDS - Volts Gate Charge - nC Figure 9. Forward Capacitance CurvesVoltage Drop of the Intrinsic Diode 50 Figure10. Drain Current vs. Case Temperature 30 IXFN26N90 45 25 40 IXFN25N90 30 ID - Amperes 35 ID - Amperes 15 TJ = 125oC 25 20 TJ = 25oC 15 10 20 15 10 5 5 0 0.0 0.3 0.6 0.9 1.2 1.5 0 -50 -25 0 25 50 75 100 125 150 Case Temperatue - oC VSD - Volts Figure 11. Transient Thermal Resistance 0. 300 R(th)JC - K/W 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4