IXFN27N80Q

HiPerFETTM Power MOSFETs Q-Class IXFN 27N80Q VDSS ID25 RDS(on) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 800 V = 27 A Ω = 320 mΩ S Test Conditions S Maximum Ratings TJ = 25°C to 150°C 800 miniBLOC, SOT-227 B (IXFN) E153432 S V G VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 27 A IDM TC = 25°C, pulse width limited by TJM 108 A 27 A 60 2.5 mJ J 5 V/ns 520 W -55 ... +150 °C Features TJM 150 °C Tstg -55 ... +150 °C • International standard package • Epoxy meet 2500 3000 V~ V~ IAR EAR EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Weight g S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • IXYS advanced low Qg process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGH(th) V DS IGSS V GS = ±20 VDC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) V GS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 = VGS, ID = 4 mA © 2001 IXYS All rights reserved 2.5 TJ = 25°C TJ = 125°C V 4.5 V ±100 nA 100 2 µA mA 0.32 Ω • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 98813 (04/01) IXFN 27N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = 0.5 ID25, pulse test 20 27 S 7600 pF 750 pF Crss 120 pF td(on) 20 ns Ciss Coss V GS = 0 V, VDS = 25 V, f = 1 MHz tr V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 28 ns td(off) RG = 1 Ω (External), 50 ns 13 ns 170 tf Qg(on) Qgs V GS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd Test Conditions IS V GS = 0 V ISM Repetitive; pulse width limited by TJM VSD t rr Inches Min. Max. 1.240 0.307 1.255 0.323 nC C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 47 nC 65 nC E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 K/W J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 K/W L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 27 A 108 A IF = IS, VGS = 0 V, Note 1 1.5 V IF = IS, -di/dt = 100 A/µs, VR = 100 V 250 ns QRM 1.3 µC 8 A IRM Note 1: Millimeter Min. Max. 31.88 8.20 0.05 Symbol Dim. 31.50 7.80 0.24 Source-Drain Diode M4 screws (4x) supplied A B RthJC RthCK miniBLOC, SOT-227 B Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.