IXFN280N085

IXFN280N085 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS = 85V ID25 = 280A RDS(on) ≤ 4.4mΩ Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS VGSM miniBLOC, SOT-227 B E153432 Maximum Ratings 85 85 V V Continuous Transient ±20 ±30 V V ID25 TC = 25°C, Chip capability 280 A IL(RMS) External Lead Current Limit IDM TC = 25°C, pulse width limited by TJM IA S G S D 200 A 1120 A TC = 25°C 200 A EAS TC = 25°C 4 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 5 V/ns Pd TC = 25°C 700 W Features • International standard package • miniBLOC, with Aluminium nitride -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ VISOL 50/60 Hz, RMS IISOL ≤ 1mA t = 1min t = 1s Md Mounting torque Terminal connection torque Weight G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source isolation • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Guaranteed FBSOA • Low package inductance • Fast intrinsic Rectifier Advantages Symbol Test Conditions BVDSS VGS = 0V, ID = 3mA 85 VGS(th) VDS = VGS, ID = 8mA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 © 2008 IXYS Corporation, All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. TJ = 125°C V 4.0 V ±200 nA 100 2 μA mA 4.4 mΩ • Easy to mount • Space savings • High power density Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls DS98747B(12/08) IXFN280N085 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID = 60A, Note 1 60 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) Resistive Switching Times tr td(off) tf Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 60A RG = 1Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 100A 100 S 19 6.4 3.2 nF nF nF 40 ns 150 112 60 ns ns ns 580 77 280 nC nC nC RthJC RthCS VGS = 0V ISM Repetitive, pulse width limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr QRM IRM IF = 50A, -di/dt = 100A/μs, VR = 50V 0.76 8.00 Dim. Millimeter Min. Max. Inches Min. Max. 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 0.18 °C/W C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 °C/W E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values Min. Typ. Max. IS M4 screws (4x) supplied A B 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) miniBLOC, SOT-227 B 280 A 1120 A 1.2 V 200 ns μC A Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN280N085 Fig. 2. Output Characteristics @ 125ºC Fig. 1. Extended Output Characteristics @ 25ºC 350 300 VGS = 10V 9V 8V 300 VGS = 10V 9V 8V 250 7V 7V ID - Amperes ID - Amperes 250 200 150 6V 200 6V 150 100 100 5V 50 50 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 Fig. 3. RDS(on) Normalized to ID = 140A Value vs. Junction Temperature 2.0 2.5 3.0 Fig. 4. RDS(on) Normalized to ID = 140A Value vs. Drain Current 1.8 1.7 1.7 VGS = 10V VGS = 10V 1.6 1.6 1.5 RDS(on) - Normalized RDS(on) - Normalized 1.5 VDS - Volts VDS - Volts I D = 280A 1.4 I D = 140A 1.3 1.2 1.1 1.0 TJ = 125ºC 1.5 1.4 1.3 1.2 1.1 0.9 TJ = 25ºC 0.8 1.0 0.7 0.9 0.6 -50 -25 0 25 50 75 100 125 0 150 50 100 200 250 300 350 Fig. 6. Forward Voltage Drop of Intrinsic Diode Fig. 5. Maximum Drain Current vs. Case Temperature 300 220 275 200 External Lead Current Limit 250 180 225 IS - Amperes 160 ID - Amperes 150 ID - Amperes TJ - Degrees Centigrade 140 120 100 80 200 175 150 125 TJ = 125ºC 100 60 75 40 50 20 25 TJ = 25ºC 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2008 IXYS Corporation, All rights reserved 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Volts IXYS REF: F_280N085(9Y-N17)12-02-08-A IXFN280N085 Fig. 7. Input Admittance Fig. 8. Transconductance 180 140 TJ = - 40ºC 160 120 140 25ºC g f s - Siemens ID - Amperes 100 120 TJ = 125ºC 25ºC - 40ºC 100 80 125ºC 80 60 60 40 40 20 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 VGS - Volts 80 100 120 140 160 180 ID - Amperes Fig. 10. Gate Charge Fig. 9. Capacitance 10 100 f = 1 MHz VDS = 43V 9 I D = 100A 8 Ciss 10 I G = 10mA 7 VGS - Volts Capacitance - NanoFarads 60 Coss 6 5 4 3 2 Crss 1 1 0 0 5 10 15 20 25 30 35 40 0 50 VDS - Volts 100 150 200 250 300 350 400 450 500 550 600 QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.000 0.100 0.010 0.001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXFN280N085 Fig. 12. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ T C = 25ºC @ T C = 75ºC 10,000 10,000 RDS(on) Limit RDS(on) Limit 1,000 1,000 25µs 1ms 100 External-Lead Limit 10ms ID - Amperes ID - Amperes 100µs 100µs 100 1ms External-Lead Limit 10ms 100ms 10 DC TJ = 150ºC 10 100ms TJ = 150ºC TC = 25ºC Single Pulse DC TC = 75ºC Single Pulse 1 1 1 10 VDS - Volts © 2008 IXYS Corporation, All rights reserved 100 1 10 100 VDS - Volts IXYS REF: F_280N085(9Y-N17)12-02-08-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.