IXFN30N120P

IXFN30N120P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D = =   1200V 30A  350m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S S miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 30 A IDM TC = 25C, Pulse Width Limited by TJM 75 A IA EAS TC = 25C TC = 25C 15 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 20 V/ns PD TC = 25C 890 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/Ib.in 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features       International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 15A, Note 1 Applications V 6.5 V 300 nA TJ = 125C © 2017 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 5 mA 350 m      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies AC Motor Control High Speed Power Switching Appliccation DS99884B(8/17) IXFN30N120P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 13 VDS = 20V, ID = 15A, Note 1 22 S 19 nF 960 pF 25 pF 1.7  57 ns 60 ns 95 ns 56 ns 310 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 15A RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 15A Qgd SOT-227B (IXFN) Outline 104 nC 137 nC RthJC (M4 screws (4x) supplied) 0.14C/W RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 30 A Repetitive, Pulse Width Limited by TJM 120 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr QRM IRM IF = 15A, -di/dt = 100A/s Note 1.6 14.0 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN30N120P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 30 VGS = 10V VGS = 10V 60 25 8V 9V 50 I D - Amperes I D - Amperes 20 15 7V 10 8V 40 30 20 7V 5 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.0 30 VGS = 10V 8V VGS = 10V 2.6 20 RDS(on) - Normalized 25 I D - Amperes 20 VDS - Volts VDS - Volts 7V 15 10 2.2 I D = 30A 1.8 I D = 15A 1.4 1.0 6V 5 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current 2.6 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 35 o 2.4 TJ = 125 C 30 25 2.0 1.8 I D - Amperes RDS(on) - Normalized 2.2 VGS = 10V 1.6 1.4 20 15 o TJ = 25 C 10 1.2 5 1.0 0 0.8 0 10 20 30 40 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 50 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFN30N120P Fig. 7. Input Admittance Fig. 8. Transconductance 35 30 o TJ = - 40 C 30 25 o 25 C 25 g f s - Siemens I D - Amperes 20 o TJ = 125 C 15 o 25 C 10 o - 40 C o 125 C 20 15 10 5 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 5 10 15 VGS - Volts 20 25 30 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 16 80 VDS = 600V 14 I D = 15A I G = 10mA 12 VGS - Volts I S - Amperes 60 40 o TJ = 125 C 20 10 8 6 4 o TJ = 25 C 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 VSD - Volts 150 200 250 300 350 400 450 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 10,000 0.1 Z(th)JC - K / W Capacitance - PicoFarads Ciss Coss 1,000 0.01 100 Crss f = 1 MHz 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_30N120P (99-799) 3-4-10-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.