IXFN320N17T2

Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 170 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 170 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C (Chip Capability) 260 A IL(RMS) IDM External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 200 800 A A IA EAS TC = 25°C TC = 25°C 100 5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns PD TC = 25°C 1070 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 170 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 60A, Note 1 TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications V 5.0 V ±200 nA 50 μA 5 mA 5.2 mΩ Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100189(09/09) IXFN320N17T2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 120 VDS = 10V, ID = 60A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 100A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 160A Qgd 190 S 45 nF 2890 pF 410 pF 1.96 Ω 46 ns 170 ns 115 ns 230 ns 640 nC 185 nC 175 nC RthJC 0.14 RthCS SOT-227B (IXFN) Outline (M4 screws (4x) supplied) °C/W °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 320 A Repetitive, Pulse Width Limited by TJM 1280 A IF = 100A, VGS = 0V, Note 1 1.25 V 150 IF = 160A, -di/dt = 100A/μs VR = 60V, VGS = 0V ns 0.53 μC 9.00 A Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN320N17T2 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 320 400 VGS = 15V 10V 8V 7V 280 240 VGS = 15V 10V 7V 350 300 ID - Amperes ID - Amperes 6V 200 6V 160 120 250 200 150 5.5V 5.5V 80 100 5V 40 5V 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 VDS - Volts Fig. 3. Output Characteristics 320 7 VGS = 10V 3.0 2.6 R DS(on) - Normalized ID - Amperes 6 3.4 VGS = 15V 10V 7V 240 6V 200 160 120 5V 80 40 I D = 320A 2.2 I D = 160A 1.8 1.4 1.0 0.6 4V 0.2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 4.0 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 160A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 175 220 200 VGS = 10V 3.0 -25 VDS - Volts 3.4 External Lead Current Limit 180 160 TJ = 175ºC 2.6 ID - Amperes R DS(on) - Normalized 5 Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature @ T J = 150ºC 280 4 VDS - Volts 2.2 1.8 1.4 140 120 100 80 60 TJ = 25ºC 40 1.0 20 0 0.6 0 50 100 150 200 250 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 300 350 400 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFN320N17T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 400 TJ = - 40ºC 180 350 160 300 g f s - Siemens ID - Amperes 140 120 100 TJ = 150ºC 80 25ºC 60 - 40ºC 25ºC 250 200 150ºC 150 100 40 50 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 10 400 VDS = 85V 9 350 I D = 160A 8 300 I G = 10mA 7 250 VGS - Volts IS - Amperes 100 ID - Amperes 200 150 6 5 4 3 TJ = 150ºC 100 2 TJ = 25ºC 50 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 100 200 300 400 500 600 700 QG - NanoCoulombs VSD - Volts Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000.0 100.0 RDS(on) Limit 100.0 100µs External Lead Limit 10.0 ID - Amperes Capacitance - NanoFarads 25µs Ciss Coss 10.0 1ms 1.0 1.0 Crss f = 1 MHz TJ = 175ºC 10ms TC = 25ºC 100ms DC Single Pulse 0.1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_320N17T2(9V)9-02-09 IXFN320N17T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 360 380 RG = 1Ω , VGS = 10V 340 RG = 1Ω , VGS = 10V 320 VDS = 85V I D VDS = 85V = 200A 280 t r - Nanoseconds t r - Nanoseconds 300 260 220 240 200 TJ = 125ºC 160 120 180 I D TJ = 25ºC = 100A 80 140 40 0 100 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 700 td(on) - - - - TJ = 125ºC, VGS = 10V 300 80 200 40 100 4 5 6 7 8 9 160 I D = 200A 300 I D = 100A 140 200 120 100 100 25 10 35 45 55 65 75 85 95 105 115 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 220 800 600 200 700 td(off) - - - - TJ = 125ºC RG = 1Ω, VGS = 10V 160 VDS = 85V 300 140 TJ = 25ºC 200 120 100 100 0 60 80 100 120 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 80 200 80 125 800 tf td(off) - - - - 700 TJ = 125ºC, VGS = 10V I D = 200A VDS = 85V 600 600 500 500 400 400 I D = 100A 300 300 200 200 100 100 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds tf t d(off) - Nanoseconds 180 40 180 400 700 400 200 VDS = 85V 0 0 3 500 t f - Nanoseconds t f - Nanoseconds I D = 100A td(off) - - - - RG = 1Ω, VGS = 10V 500 t f - Nanoseconds t r - Nanoseconds 120 2 200 t d(off) - Nanoseconds 400 t d(on) - Nanoseconds 160 I D = 200A 1 180 220 tf 600 200 VDS = 85V 500 160 700 240 600 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFN320N17T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.200 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_320N17T2(9V)9-02-09 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.